Inventor
JUNG SU JIN
KR33 patents
⚠️ This page may combine multiple inventors who share the name “JUNG SU JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS10297601B2May 21, 2019
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD19 citations94
US9153692B2Oct 6, 2015
Semiconductor device having a stress film on a side surface of a fin
SAMSUNG ELECTRONICS CO LTD40 citations93
US9761719B2Sep 12, 2017
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD19 citations92
US10388791B2Aug 20, 2019
Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US11031502B2Jun 8, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations83
US9275995B2Mar 1, 2016
Semiconductor devices having composite spacers containing different dielectric materials
SAMSUNG ELECTRONICS CO LTD6 citations73
US11239363B2Feb 1, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10644158B2May 5, 2020
Semiconductor device including fin field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US10008600B2Jun 26, 2018
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD3 citations72
US9608117B2Mar 28, 2017
Semiconductor devices including a finFET
SAMSUNG ELECTRONICS CO LTD4 citations72
US12581634B2Mar 17, 2026
Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12328902B2Jun 10, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12132113B2Oct 29, 2024
Multi-bridge channel transistors with stacked source/drain structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11901453B2Feb 13, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11843053B2Dec 12, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US11670716B2Jun 6, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11594598B2Feb 28, 2023
Semiconductor device including source/drain region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11469237B2Oct 11, 2022
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11257905B2Feb 22, 2022
Semiconductor device including source/drain region
SAMSUNG ELECTRONICS CO LTD0 citations62
US10727348B2Jul 28, 2020
Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US9755076B2Sep 5, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9553192B2Jan 24, 2017
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US12495588B2Dec 9, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11916123B2Feb 27, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10411702B2Sep 10, 2019
Electronic device including input apparatus
SAMSUNG ELECTRONICS CO LTD0 citations38
KIM SEOK-HOON
2 patentsUS9595611B2Mar 14, 2017
FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistor
KIM SEOK-HOON21 citations93
US9397219B2Jul 19, 2016
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
KIM SEOK-HOON8 citations83