Inventor
ICHIKAWA SHINTO
JP26 patents
Patents
26 patentsUS11730063B2Aug 15, 2023
Magnetoresistive effect element including a Heusler alloy layer with a crystal region and an amorphous region
TDK CORP7 citations85
US10825985B2Nov 3, 2020
Magnetoresistance effect element
TDK CORP5 citations84
US11967348B2Apr 23, 2024
Magnetoresistance effect element containing Heusler alloy with additive element
TDK CORP3 citations74
US12035635B2Jul 9, 2024
Magnetoresistance effect element
TDK CORP1 citations73
US11621392B2Apr 4, 2023
Magnetoresistance effect element including a crystallized co heusler alloy layer
TDK CORP3 citations73
US11525873B2Dec 13, 2022
Magnetoresistance effect element including at least one Heusler alloy layer and at least one discontinuous non-magnetic layer
TDK CORP5 citations73
US11362270B2Jun 14, 2022
Magnetoresistance effect element
TDK CORP2 citations73
US11158785B2Oct 26, 2021
Magnetoresistance effect element including a crystallized Heusler alloy
TDK CORP3 citations73
US11005035B2May 11, 2021
Magnetoresistive effect element
TDK CORP2 citations73
US12538712B2Jan 27, 2026
Magnetoresistive effect element and crystallization method of ferromagnetic layer
TDK CORP0 citations62
US12507598B2Dec 23, 2025
Magnetoresistance effect element with layers containing crystallized Co Heusler alloy
TDK CORP0 citations62
US12364168B2Jul 15, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12288576B2Apr 29, 2025
Magnetoresistance effect element, magnetic recording element, and high-frequency device
TDK CORP0 citations62
US12278033B2Apr 15, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12274184B2Apr 8, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12063873B2Aug 13, 2024
Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer
TDK CORP0 citations62
US11944018B2Mar 26, 2024
Magnetoresistance effect element
TDK CORP0 citations62
US11728082B2Aug 15, 2023
Magnetoresistive effect element
TDK CORP0 citations62
US11696513B2Jul 4, 2023
Magnetoresistance effect element and method for manufacturing the same
TDK CORP0 citations62
US11594674B2Feb 28, 2023
Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
TDK CORP0 citations62
US10944043B2Mar 9, 2021
Magnetoresistance effect element and method for manufacturing the same
TDK CORP1 citations62
US11927649B2Mar 12, 2024
Magnetoresistance effect element
TDK CORP0 citations60
US12477953B2Nov 18, 2025
Domain wall movement element, magnetoresistive element, and magnetic array
TDK CORP0 citations52
US11069852B2Jul 20, 2021
Magnetoresistance effect element
TDK CORP0 citations52
US11585873B2Feb 21, 2023
Magnetoresistive effect element containing two non-magnetic layers with different crystal structures
TDK CORP0 citations51
US10665776B2May 26, 2020
Magnetoresistance effect element and method for manufacturing the same
TDK CORP0 citations51