Inventor
NAKADA KATSUYUKI
JP75 patents
Patents
50 patentsUS11410689B2Aug 9, 2022
Magnetoresistance effect element and Heusler alloy
TDK CORP6 citations86
US11730063B2Aug 15, 2023
Magnetoresistive effect element including a Heusler alloy layer with a crystal region and an amorphous region
TDK CORP7 citations85
US11335365B2May 17, 2022
Magnetoresistance effect element and heusler alloy
TDK CORP5 citations84
US10921392B2Feb 16, 2021
Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
TDK CORP5 citations84
US10825985B2Nov 3, 2020
Magnetoresistance effect element
TDK CORP5 citations84
US10453598B2Oct 22, 2019
Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
TDK CORP7 citations84
US10453482B2Oct 22, 2019
Magnetoresistive effect element, magnetic head, sensor, high-frequency filter, and oscillator
TDK CORP7 citations84
US10255934B2Apr 9, 2019
Magnetoresistance effect element
TDK CORP8 citations84
US10020445B2Jul 10, 2018
Magnetoresistive effect element
TDK CORP10 citations84
US7417826B2Aug 26, 2008
Magnetic recording medium
TDK CORP12 citations84
US12217775B2Feb 4, 2025
Magnetoresistance effect element and Heusler alloy
TDK CORP2 citations75
US11769523B2Sep 26, 2023
Magnetoresistance effect element and Heusler alloy
TDK CORP4 citations75
US11694714B2Jul 4, 2023
Magnetoresistance effect element and Heusler alloy
TDK CORP4 citations75
US11581365B2Feb 14, 2023
Magnetoresistance effect element and Heusler alloy
TDK CORP6 citations75
US11967348B2Apr 23, 2024
Magnetoresistance effect element containing Heusler alloy with additive element
TDK CORP3 citations74
US12035635B2Jul 9, 2024
Magnetoresistance effect element
TDK CORP1 citations73
US11621392B2Apr 4, 2023
Magnetoresistance effect element including a crystallized co heusler alloy layer
TDK CORP3 citations73
US11525873B2Dec 13, 2022
Magnetoresistance effect element including at least one Heusler alloy layer and at least one discontinuous non-magnetic layer
TDK CORP5 citations73
US11362270B2Jun 14, 2022
Magnetoresistance effect element
TDK CORP2 citations73
US11309115B2Apr 19, 2022
Magnetoresistance effect element
TDK CORP4 citations73
US11158785B2Oct 26, 2021
Magnetoresistance effect element including a crystallized Heusler alloy
TDK CORP3 citations73
US11056639B2Jul 6, 2021
Magnetoresistance effect element
TDK CORP2 citations73
US11005035B2May 11, 2021
Magnetoresistive effect element
TDK CORP2 citations73
US10937451B2Mar 2, 2021
Magnetoresistive effect element with nonmagnetic spacer layer including an aluminum alloy
TDK CORP4 citations73
US10937954B2Mar 2, 2021
Magnetoresistive effect element
TDK CORP4 citations73
US10559749B2Feb 11, 2020
Magnetoresistive effect element
TDK CORP5 citations73
US10505105B2Dec 10, 2019
Magnetoresistive effect element
TDK CORP5 citations73
US10468589B2Nov 5, 2019
Magnetoresistance effect element
TDK CORP3 citations73
US10109788B2Oct 23, 2018
Magnetoresistance effect element
TDK CORP3 citations73
US12477755B2Nov 18, 2025
Variable capacitor and integrated circuit
TDK CORP0 citations63
US11871681B2Jan 9, 2024
Magnetoresistance effect element
TDK CORP0 citations63
US11840757B2Dec 12, 2023
Film deposition system, factory system, and method of depositing film on wafer
TDK CORP0 citations63
US11600771B2Mar 7, 2023
Magnetoresistance effect element
TDK CORP0 citations63
US11127894B2Sep 21, 2021
Spin-orbit-torque magnetization rotating element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
TDK CORP1 citations63
US11056642B2Jul 6, 2021
Magnetoresistance effect element
TDK CORP0 citations63
US9153771B2Oct 6, 2015
Thin film magnetic element having a pair of first soft magnetic layers sandwiching a magnetoresistive effect film and a coil windingly formed about a second soft magnetic layer
TDK CORP3 citations63
US7531103B2May 12, 2009
Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium
TDK CORP2 citations63
US7184382B2Feb 27, 2007
Energy beam irradiating apparatus
TDK CORP2 citations63
US12538712B2Jan 27, 2026
Magnetoresistive effect element and crystallization method of ferromagnetic layer
TDK CORP0 citations62
US12507598B2Dec 23, 2025
Magnetoresistance effect element with layers containing crystallized Co Heusler alloy
TDK CORP0 citations62
US12364168B2Jul 15, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12288576B2Apr 29, 2025
Magnetoresistance effect element, magnetic recording element, and high-frequency device
TDK CORP0 citations62
US12278033B2Apr 15, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12274184B2Apr 8, 2025
Magnetoresistance effect element
TDK CORP0 citations62
US12063873B2Aug 13, 2024
Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer
TDK CORP0 citations62
US11944018B2Mar 26, 2024
Magnetoresistance effect element
TDK CORP0 citations62
US11728082B2Aug 15, 2023
Magnetoresistive effect element
TDK CORP0 citations62
US11696513B2Jul 4, 2023
Magnetoresistance effect element and method for manufacturing the same
TDK CORP0 citations62
US11594674B2Feb 28, 2023
Tunnel barrier layer, magnetoresistance effect element, method for manufacturing tunnel barrier layer, and insulating layer
TDK CORP0 citations62
US11450342B2Sep 20, 2022
Magnetoresistance effect element including a Heusler alloy ferromagnetic layer in contact with an intermediate layer
TDK CORP0 citations62
Showing the top 50 of 75 patents by PatentIndex Score.