Inventor
CAO KANYU
CN27 patents
⚠️ This page may combine multiple inventors who share the name “CAO KANYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHANGXIN MEMORY TECH INC
16 patentsUS12386266B2Aug 12, 2025
Method of processing photoresist layer, and photoresist layer
CHANGXIN MEMORY TECH INC2 citations74
US11423956B2Aug 23, 2022
Sensitivity amplifier, its control method, memory and its read-write circuit
CHANGXIN MEMORY TECH INC4 citations72
US12432932B2Sep 30, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations61
US12419058B2Sep 16, 2025
Semiconductor structure, manufacturing method therefor and memory
CHANGXIN MEMORY TECH INC0 citations61
US12310030B2May 20, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations61
US12310247B2May 20, 2025
Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory
CHANGXIN MEMORY TECH INC0 citations61
US12232330B2Feb 18, 2025
Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory
CHANGXIN MEMORY TECH INC0 citations61
US11626558B2Apr 11, 2023
Semiconductor structure and manufacturing method thereof, and memory
CHANGXIN MEMORY TECH INC0 citations61
US12471274B2Nov 11, 2025
Semiconductor structure
CHANGXIN MEMORY TECH INC0 citations51
US12356632B2Jul 8, 2025
Memory device and preparing method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12253804B2Mar 18, 2025
Method of forming photoresist pattern and projection exposure apparatus
CHANGXIN MEMORY TECH INC0 citations51
US12190985B2Jan 7, 2025
Sense amplifier circuit, memory device, and operation method thereof
CHANGXIN MEMORY TECH INC0 citations51
US12088902B2Sep 10, 2024
Camera module and electronic device
CHANGXIN MEMORY TECH INC0 citations51
US11862284B2Jan 2, 2024
Sense amplifier, memory and data readout method
CHANGXIN MEMORY TECH INC0 citations51
US12400957B2Aug 26, 2025
Geometric semiconductor memory structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations50
US11948616B2Apr 2, 2024
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations50
UNIV ANHUI
8 patentsUS11315610B1Apr 26, 2022
Sense amplifier, memory and method for controlling sense amplifier
UNIV ANHUI6 citations73
US11887655B2Jan 30, 2024
Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
UNIV ANHUI3 citations72
US11423957B2Aug 23, 2022
Sense amplifier, memory and method for controlling a sense amplifier
UNIV ANHUI2 citations70
US11929112B2Mar 12, 2024
Sense amplifier, memory, and method for controlling sense amplifier
UNIV ANHUI0 citations61
US11862285B2Jan 2, 2024
Sense amplifier, memory and control method of sense amplifier
UNIV ANHUI1 citations61
US11929716B2Mar 12, 2024
Sense amplifier, memory and method for controlling sense amplifier
UNIV ANHUI0 citations50
US11869624B2Jan 9, 2024
Sense amplifier, memory and method for controlling sense amplifier
UNIV ANHUI0 citations49
US11929111B2Mar 12, 2024
Sense amplifier, memory and method for controlling sense amplifier
UNIV ANHUI0 citations48