Inventor
IPRI ALFRED C
US40 patents
⚠️ This page may combine multiple inventors who share the name “IPRI ALFRED C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RCA CORP
24 patentsUS4597160AJul 1, 1986
Method of fabricating a polysilicon transistor with a high carrier mobility
RCA CORP164 citations99
US4566025AJan 21, 1986
CMOS Structure incorporating vertical IGFETS
RCA CORP41 citations96
US4554570ANov 19, 1985
Vertically integrated IGFET device
RCA CORP71 citations96
US4271422AJun 2, 1981
CMOS SOS With narrow ring shaped P silicon gate common to both devices
RCA CORP55 citations96
US4530149AJul 23, 1985
Method for fabricating a self-aligned vertical IGFET
RCA CORP111 citations95
US4513397AApr 23, 1985
Electrically alterable, nonvolatile floating gate memory device
RCA CORP42 citations93
US4282556AAug 4, 1981
Input protection device for insulated gate field effect transistor
RCA CORP41 citations93
US4692344ASep 8, 1987
Method of forming a dielectric film and semiconductor device including said film
RCA CORP33 citations92
US4618876AOct 21, 1986
Electrically alterable, nonvolatile floating gate memory device
RCA CORP20 citations82
US4577215AMar 18, 1986
Dual word line, electrically alterable, nonvolatile floating gate memory device
RCA CORP23 citations82
US4263057AApr 21, 1981
Method of manufacturing short channel MOS devices
RCA CORP20 citations82
US4244001AJan 6, 1981
Fabrication of an integrated injection logic device with narrow basewidth
RCA CORP22 citations82
US4225875ASep 30, 1980
Short channel MOS devices and the method of manufacturing same
RCA CORP26 citations82
US4758529AJul 19, 1988
Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
RCA CORP14 citations74
US4608591AAug 26, 1986
Electrically alterable programmable nonvolatile floating gate memory device
RCA CORP10 citations74
US4442447AApr 10, 1984
Electrically alterable nonvolatile floating gate memory device
RCA CORP14 citations74
US4217688AAug 19, 1980
Fabrication of an integrated injection logic device incorporating an MOS/bipolar current injector
RCA CORP7 citations74
US4200878AApr 29, 1980
Method of fabricating a narrow base-width bipolar device and the product thereof
RCA CORP8 citations74
US4722912AFeb 2, 1988
Method of forming a semiconductor structure
RCA CORP17 citations73
US4658495AApr 21, 1987
Method of forming a semiconductor structure
RCA CORP8 citations73
US4259779AApr 7, 1981
Method of making radiation resistant MOS transistor
RCA CORP7 citations73
US4323910AApr 6, 1982
MNOS Memory transistor
RCA CORP9 citations70
US4201603AMay 6, 1980
Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
RCA CORP17 citations70
US4169746AOct 2, 1979
Method for making silicon on sapphire transistor utilizing predeposition of leads
RCA CORP17 citations70
GEN ELECTRIC
9 patentsUS4947221AAug 7, 1990
Memory cell for a dense EPROM
GEN ELECTRIC105 citations96
US4804640AFeb 14, 1989
Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
GEN ELECTRIC73 citations96
US4933904AJun 12, 1990
Dense EPROM having serially coupled floating gate transistors
GEN ELECTRIC40 citations92
US4872141AOct 3, 1989
Radiation hard memory cell having monocrystalline and non-monocrystalline inverters
GEN ELECTRIC22 citations82
US4965646AOct 23, 1990
Thin film transistor and crossover structure for liquid crystal displays
GEN ELECTRIC9 citations74
US4918498AApr 17, 1990
Edgeless semiconductor device
GEN ELECTRIC9 citations74
US4864380ASep 5, 1989
Edgeless CMOS device
GEN ELECTRIC17 citations74
US4791464ADec 13, 1988
Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
GEN ELECTRIC16 citations74
US4926236AMay 15, 1990
Multilayer interconnect and method of forming same
GEN ELECTRIC1 citations52
SARNOFF DAVID RES CENTER
3 patentsUS5076667ADec 31, 1991
High speed signal and power supply bussing for liquid crystal displays
SARNOFF DAVID RES CENTER70 citations96
US5587329ADec 24, 1996
Method for fabricating a switching transistor having a capacitive network proximate a drift region
SARNOFF DAVID RES CENTER76 citations95
US4996575AFeb 26, 1991
Low leakage silicon-on-insulator CMOS structure and method of making same
SARNOFF DAVID RES CENTER61 citations95