P

Inventor

TAKAGI TOSHINORI

JP44 patents
⚠️ This page may combine multiple inventors who share the name “TAKAGI TOSHINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUTABA DENSHI KOGYO KK

31 patents
US4217855AAug 19, 1980

Vaporized-metal cluster ion source and ionized-cluster beam deposition device

FUTABA DENSHI KOGYO KK79 citations96
US4152478AMay 1, 1979

Ionized-cluster deposited on a substrate and method of depositing ionized cluster on a substrate

FUTABA DENSHI KOGYO KK99 citations96
US4559901ADec 24, 1985

Ion beam deposition apparatus

FUTABA DENSHI KOGYO KK35 citations93
US4523211AJun 11, 1985

Semiconductor device

FUTABA DENSHI KOGYO KK47 citations93
US4500741AFeb 19, 1985

Energy conversion element

FUTABA DENSHI KOGYO KK31 citations93
US4286545ASep 1, 1981

Apparatus for vapor depositing a stoichiometric compound

FUTABA DENSHI KOGYO KK35 citations93
US5786659AJul 28, 1998

Field emission type electron source

FUTABA DENSHI KOGYO KK36 citations92
US5189341AFeb 23, 1993

Electron emitting element

FUTABA DENSHI KOGYO KK42 citations92
US4789500ADec 6, 1988

Optical control element

FUTABA DENSHI KOGYO KK36 citations91
US4724106AFeb 9, 1988

Process for forming organic film

FUTABA DENSHI KOGYO KK24 citations82
US4451499AMay 29, 1984

Method for producing a beryllium oxide film

FUTABA DENSHI KOGYO KK20 citations82
US4374162AFeb 15, 1983

Thin-film deposition

FUTABA DENSHI KOGYO KK22 citations82
US4213844AJul 22, 1980

Ion plating apparatus

FUTABA DENSHI KOGYO KK29 citations82
US4197814AApr 15, 1980

Apparatus for forming compound semiconductor thin-films

FUTABA DENSHI KOGYO KK29 citations82
US4066527AJan 3, 1978

Method of producing semiconductor device

FUTABA DENSHI KOGYO KK26 citations82
US4622236ANov 11, 1986

Boron nitride film and process for preparing same

FUTABA DENSHI KOGYO KK12 citations74
US4581113AApr 8, 1986

Process for forming an amorphous silicon film

FUTABA DENSHI KOGYO KK12 citations74
US4565741AJan 21, 1986

Boron nitride film and process for preparing same

FUTABA DENSHI KOGYO KK13 citations74
US4539054ASep 3, 1985

Amorphous film of transition element-silicon compound

FUTABA DENSHI KOGYO KK17 citations74
US4500742AFeb 19, 1985

Iron silicide thermoelectric conversion element

FUTABA DENSHI KOGYO KK15 citations74
US4394210AJul 19, 1983

Process for forming a lead film

FUTABA DENSHI KOGYO KK12 citations74
US4227961AOct 14, 1980

Process for forming a single-crystal film

FUTABA DENSHI KOGYO KK19 citations74
US4156159AMay 22, 1979

Self crossed field type ion source

FUTABA DENSHI KOGYO KK7 citations74
US4218495AAug 19, 1980

Schottky barrier type solid-state element

FUTABA DENSHI KOGYO KK8 citations73
US4161418AJul 17, 1979

Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers

FUTABA DENSHI KOGYO KK14 citations73
US4139857AFeb 13, 1979

Schottky barrier type solid-state element

FUTABA DENSHI KOGYO KK11 citations73
US4098919AJul 4, 1978

Process for producing a thin fluorescent film for electroluminescence

FUTABA DENSHI KOGYO KK18 citations73
US4039699AAug 2, 1977

Method for making phosphors

FUTABA DENSHI KOGYO KK13 citations73
US4535195AAug 13, 1985

Photoelectromotive force element

FUTABA DENSHI KOGYO KK5 citations63
US4755438AJul 5, 1988

Aluminum film coated copper material

FUTABA DENSHI KOGYO KK1 citations52
US3967125AJun 29, 1976

Method and apparatus for making phosphors

FUTABA DENSHI KOGYO KK1 citations52

SHARP KK

3 patents

SEIKISUI CHEMICAL CO LTD

3 patents

NISSIN HIGH VOLTAGE CO LTD

2 patents

NIPPON DENSHI ZAIRYO KK

2 patents

UNIV KYOTO

1 patent

SUMITOMO BAKELITE CO

1 patent

TAKAGI TOSHINORI

1 patent