Inventor
TAKAGI TOSHINORI
JP44 patents
⚠️ This page may combine multiple inventors who share the name “TAKAGI TOSHINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUTABA DENSHI KOGYO KK
31 patentsUS4217855AAug 19, 1980
Vaporized-metal cluster ion source and ionized-cluster beam deposition device
FUTABA DENSHI KOGYO KK79 citations96
US4152478AMay 1, 1979
Ionized-cluster deposited on a substrate and method of depositing ionized cluster on a substrate
FUTABA DENSHI KOGYO KK99 citations96
US4559901ADec 24, 1985
Ion beam deposition apparatus
FUTABA DENSHI KOGYO KK35 citations93
US4523211AJun 11, 1985
Semiconductor device
FUTABA DENSHI KOGYO KK47 citations93
US4500741AFeb 19, 1985
Energy conversion element
FUTABA DENSHI KOGYO KK31 citations93
US4286545ASep 1, 1981
Apparatus for vapor depositing a stoichiometric compound
FUTABA DENSHI KOGYO KK35 citations93
US5786659AJul 28, 1998
Field emission type electron source
FUTABA DENSHI KOGYO KK36 citations92
US5189341AFeb 23, 1993
Electron emitting element
FUTABA DENSHI KOGYO KK42 citations92
US4789500ADec 6, 1988
Optical control element
FUTABA DENSHI KOGYO KK36 citations91
US4724106AFeb 9, 1988
Process for forming organic film
FUTABA DENSHI KOGYO KK24 citations82
US4451499AMay 29, 1984
Method for producing a beryllium oxide film
FUTABA DENSHI KOGYO KK20 citations82
US4374162AFeb 15, 1983
Thin-film deposition
FUTABA DENSHI KOGYO KK22 citations82
US4213844AJul 22, 1980
Ion plating apparatus
FUTABA DENSHI KOGYO KK29 citations82
US4197814AApr 15, 1980
Apparatus for forming compound semiconductor thin-films
FUTABA DENSHI KOGYO KK29 citations82
US4066527AJan 3, 1978
Method of producing semiconductor device
FUTABA DENSHI KOGYO KK26 citations82
US4622236ANov 11, 1986
Boron nitride film and process for preparing same
FUTABA DENSHI KOGYO KK12 citations74
US4581113AApr 8, 1986
Process for forming an amorphous silicon film
FUTABA DENSHI KOGYO KK12 citations74
US4565741AJan 21, 1986
Boron nitride film and process for preparing same
FUTABA DENSHI KOGYO KK13 citations74
US4539054ASep 3, 1985
Amorphous film of transition element-silicon compound
FUTABA DENSHI KOGYO KK17 citations74
US4500742AFeb 19, 1985
Iron silicide thermoelectric conversion element
FUTABA DENSHI KOGYO KK15 citations74
US4394210AJul 19, 1983
Process for forming a lead film
FUTABA DENSHI KOGYO KK12 citations74
US4227961AOct 14, 1980
Process for forming a single-crystal film
FUTABA DENSHI KOGYO KK19 citations74
US4156159AMay 22, 1979
Self crossed field type ion source
FUTABA DENSHI KOGYO KK7 citations74
US4218495AAug 19, 1980
Schottky barrier type solid-state element
FUTABA DENSHI KOGYO KK8 citations73
US4161418AJul 17, 1979
Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers
FUTABA DENSHI KOGYO KK14 citations73
US4139857AFeb 13, 1979
Schottky barrier type solid-state element
FUTABA DENSHI KOGYO KK11 citations73
US4098919AJul 4, 1978
Process for producing a thin fluorescent film for electroluminescence
FUTABA DENSHI KOGYO KK18 citations73
US4039699AAug 2, 1977
Method for making phosphors
FUTABA DENSHI KOGYO KK13 citations73
US4535195AAug 13, 1985
Photoelectromotive force element
FUTABA DENSHI KOGYO KK5 citations63
US4755438AJul 5, 1988
Aluminum film coated copper material
FUTABA DENSHI KOGYO KK1 citations52
US3967125AJun 29, 1976
Method and apparatus for making phosphors
FUTABA DENSHI KOGYO KK1 citations52
SHARP KK
3 patentsSEIKISUI CHEMICAL CO LTD
3 patentsUS4354909AOct 19, 1982
Process for production of magnetic recording medium
SEIKISUI CHEMICAL CO LTD23 citations80
US4395465AJul 26, 1983
Magnetic recording medium and process for production thereof
SEIKISUI CHEMICAL CO LTD11 citations71
US4382110AMay 3, 1983
Magnetic recording medium
SEIKISUI CHEMICAL CO LTD6 citations71