Inventor
LEI JIANXIN
US29 patents
⚠️ This page may combine multiple inventors who share the name “LEI JIANXIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
27 patentsUS9583349B2Feb 28, 2017
Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride
APPLIED MATERIALS INC17 citations83
US10163696B2Dec 25, 2018
Selective cobalt removal for bottom up gapfill
APPLIED MATERIALS INC2 citations73
US11114320B2Sep 7, 2021
Processing system and method of forming a contact
APPLIED MATERIALS INC3 citations72
US10903112B2Jan 26, 2021
Methods and apparatus for smoothing dynamic random access memory bit line metal
APPLIED MATERIALS INC2 citations72
US10043670B2Aug 7, 2018
Systems and methods for low resistivity physical vapor deposition of a tungsten film
APPLIED MATERIALS INC4 citations72
US10388532B2Aug 20, 2019
Methods and devices using PVD ruthenium
APPLIED MATERIALS INC2 citations71
US11908696B2Feb 20, 2024
Methods and devices for subtractive self-alignment
APPLIED MATERIALS INC0 citations62
US11661651B2May 30, 2023
Methods and apparatus for passivating a target
APPLIED MATERIALS INC0 citations62
US11512387B2Nov 29, 2022
Methods and apparatus for passivating a target
APPLIED MATERIALS INC0 citations62
US11489110B2Nov 1, 2022
Methods for treating magnesium oxide film
APPLIED MATERIALS INC0 citations62
US11257677B2Feb 22, 2022
Methods and devices for subtractive self-alignment
APPLIED MATERIALS INC0 citations62
US11227751B1Jan 18, 2022
Plasma chamber target for reducing defects in workpiece during dielectric sputtering
APPLIED MATERIALS INC0 citations62
US10734235B2Aug 4, 2020
Systems and methods for low resistivity physical vapor deposition of a tungsten film
APPLIED MATERIALS INC1 citations62
US12338527B2Jun 24, 2025
Shutter disk for physical vapor deposition (PVD) chamber
APPLIED MATERIALS INC0 citations61
US11655534B2May 23, 2023
Apparatus for reducing tungsten resistivity
APPLIED MATERIALS INC0 citations61
US11637107B2Apr 25, 2023
Silicon-containing layer for bit line resistance reduction
APPLIED MATERIALS INC0 citations61
US11626410B2Apr 11, 2023
Silicon-containing layer for bit line resistance reduction
APPLIED MATERIALS INC0 citations61
US11447857B2Sep 20, 2022
Methods and apparatus for reducing tungsten resistivity
APPLIED MATERIALS INC0 citations61
US11898236B2Feb 13, 2024
Methods and apparatus for processing a substrate
APPLIED MATERIALS INC1 citations60
US12467127B2Nov 11, 2025
Molybdenum monolithic physical vapor deposition target
APPLIED MATERIALS INC0 citations59
US12387978B2Aug 12, 2025
Ru liner above a barrier layer
APPLIED MATERIALS INC0 citations58
US10770346B2Sep 8, 2020
Selective cobalt removal for bottom up gapfill
APPLIED MATERIALS INC0 citations52
US10950500B2Mar 16, 2021
Methods and apparatus for filling a feature disposed in a substrate
APPLIED MATERIALS INC0 citations51
US10304732B2May 28, 2019
Methods and apparatus for filling substrate features with cobalt
APPLIED MATERIALS INC0 citations51
US9461137B1Oct 4, 2016
Tungsten silicide nitride films and methods of formation
APPLIED MATERIALS INC0 citations51
US7485556B2Feb 3, 2009
Forming metal silicide on silicon-containing features of a substrate
APPLIED MATERIALS INC1 citations51
US10700072B2Jun 30, 2020
Cap layer for bit line resistance reduction
APPLIED MATERIALS INC0 citations41