P

Inventor

LEI JIANXIN

US29 patents
⚠️ This page may combine multiple inventors who share the name “LEI JIANXIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

27 patents
US9583349B2Feb 28, 2017

Lowering tungsten resistivity by replacing titanium nitride with titanium silicon nitride

APPLIED MATERIALS INC17 citations83
US10163696B2Dec 25, 2018

Selective cobalt removal for bottom up gapfill

APPLIED MATERIALS INC2 citations73
US11114320B2Sep 7, 2021

Processing system and method of forming a contact

APPLIED MATERIALS INC3 citations72
US10903112B2Jan 26, 2021

Methods and apparatus for smoothing dynamic random access memory bit line metal

APPLIED MATERIALS INC2 citations72
US10043670B2Aug 7, 2018

Systems and methods for low resistivity physical vapor deposition of a tungsten film

APPLIED MATERIALS INC4 citations72
US10388532B2Aug 20, 2019

Methods and devices using PVD ruthenium

APPLIED MATERIALS INC2 citations71
US11908696B2Feb 20, 2024

Methods and devices for subtractive self-alignment

APPLIED MATERIALS INC0 citations62
US11661651B2May 30, 2023

Methods and apparatus for passivating a target

APPLIED MATERIALS INC0 citations62
US11512387B2Nov 29, 2022

Methods and apparatus for passivating a target

APPLIED MATERIALS INC0 citations62
US11489110B2Nov 1, 2022

Methods for treating magnesium oxide film

APPLIED MATERIALS INC0 citations62
US11257677B2Feb 22, 2022

Methods and devices for subtractive self-alignment

APPLIED MATERIALS INC0 citations62
US11227751B1Jan 18, 2022

Plasma chamber target for reducing defects in workpiece during dielectric sputtering

APPLIED MATERIALS INC0 citations62
US10734235B2Aug 4, 2020

Systems and methods for low resistivity physical vapor deposition of a tungsten film

APPLIED MATERIALS INC1 citations62
US12338527B2Jun 24, 2025

Shutter disk for physical vapor deposition (PVD) chamber

APPLIED MATERIALS INC0 citations61
US11655534B2May 23, 2023

Apparatus for reducing tungsten resistivity

APPLIED MATERIALS INC0 citations61
US11637107B2Apr 25, 2023

Silicon-containing layer for bit line resistance reduction

APPLIED MATERIALS INC0 citations61
US11626410B2Apr 11, 2023

Silicon-containing layer for bit line resistance reduction

APPLIED MATERIALS INC0 citations61
US11447857B2Sep 20, 2022

Methods and apparatus for reducing tungsten resistivity

APPLIED MATERIALS INC0 citations61
US11898236B2Feb 13, 2024

Methods and apparatus for processing a substrate

APPLIED MATERIALS INC1 citations60
US12467127B2Nov 11, 2025

Molybdenum monolithic physical vapor deposition target

APPLIED MATERIALS INC0 citations59
US12387978B2Aug 12, 2025

Ru liner above a barrier layer

APPLIED MATERIALS INC0 citations58
US10770346B2Sep 8, 2020

Selective cobalt removal for bottom up gapfill

APPLIED MATERIALS INC0 citations52
US10950500B2Mar 16, 2021

Methods and apparatus for filling a feature disposed in a substrate

APPLIED MATERIALS INC0 citations51
US10304732B2May 28, 2019

Methods and apparatus for filling substrate features with cobalt

APPLIED MATERIALS INC0 citations51
US9461137B1Oct 4, 2016

Tungsten silicide nitride films and methods of formation

APPLIED MATERIALS INC0 citations51
US7485556B2Feb 3, 2009

Forming metal silicide on silicon-containing features of a substrate

APPLIED MATERIALS INC1 citations51
US10700072B2Jun 30, 2020

Cap layer for bit line resistance reduction

APPLIED MATERIALS INC0 citations41

WANG RONGJUN

1 patent

LEI JIANXIN

1 patent