Inventor

TARUI YOICHIRO

JP43 patents

⚠️ This page may combine multiple inventors who share the name “TARUI YOICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TARUI YOICHIRO

MITSUBISHI ELECTRIC CORP

Semiconductor device having lateral high breakdown voltage element

Method of manufacturing silicon carbide semiconductor device

Method of manufacturing a SiC vertical MOSFET

Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle

Semiconductor device

Silicon carbide semiconductor device

Silicon carbide semiconductor device

Semiconductor device and semiconductor device manufacturing method

Method for manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device manufacturing method

Semiconductor device having a plurality of pillars and method of manufacturing the semiconductor device

Manufacturing method of silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer

Semiconductor device having junction termination extension

SiC semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing same

Semiconductor device

Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needle

Silicon carbide semiconductor device

Power semiconductor device

Silicon carbide semiconductor device with a trench

Silicon carbide semiconductor device

Silicon carbide semiconductor device

Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact

Method of manufacturing semiconductor device

TARUI YOICHIRO

Silicon carbide semiconductor device

Semiconductor device

Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof

Silicon carbide semiconductor device and manufacturing method thereof

Silicon carbide semiconductor device and manufacturing method thereof

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device

OKUNO KOJI

Method of manufacturing silicon carbide semiconductor device

SUEKAWA EISUKE

Semiconductor device

MATSUNO YOSHINORI

Manufacturing method of silicon carbide semiconductor device

ORITSUKI YASUNORI

Silicon carbide semiconductor device

UDA YUKIO

Method of manufacturing silicon carbide semiconductor device

TSUCHIYA NORIAKI

SiC semiconductor device and method of manufacturing the same

WATANABE TOMOKATSU

Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same