Inventor
KIM HYUN-GI
KR27 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUN-GI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS8373214B2Feb 12, 2013
Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US8053316B2Nov 8, 2011
Method of fabricating vertical channel transistor
SAMSUNG ELECTRONICS CO LTD9 citations84
US7902026B2Mar 8, 2011
Method of fabricating semiconductor device having vertical channel transistor
SAMSUNG ELECTRONICS CO LTD12 citations84
US10811078B2Oct 20, 2020
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations82
US9184091B2Nov 10, 2015
Semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US7999309B2Aug 16, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations74
US10802912B2Oct 13, 2020
Semiconductor memory device and memory system having the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11557332B2Jan 17, 2023
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations71
US10586584B2Mar 10, 2020
Semiconductor semiconductor memory devices, memory systems and methods of operating memory devices
SAMSUNG ELECTRONICS CO LTD2 citations71
US8946077B2Feb 3, 2015
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations71
US8372715B2Feb 12, 2013
Vertical channel transistors and methods for fabricating vertical channel transistors
SAMSUNG ELECTRONICS CO LTD2 citations62
US11031065B2Jun 8, 2021
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US8343831B2Jan 1, 2013
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9953985B2Apr 24, 2018
Method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations50
US7863174B2Jan 4, 2011
Vertical pillar transistor
SAMSUNG ELECTRONICS CO LTD0 citations42
KIM HUI-JUNG
4 patentsUS8304824B2Nov 6, 2012
Semiconductor device comprising buried word lines
KIM HUI-JUNG8 citations83
US8274112B2Sep 25, 2012
Semiconductor memory device having pillar structures
KIM HUI-JUNG5 citations62
US8623724B2Jan 7, 2014
Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
US8247856B2Aug 21, 2012
Semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
KIM KANG-UK
3 patentsUS8294131B2Oct 23, 2012
Integrated circuit devices including low-resistivity conductive patterns in recessed regions
KIM KANG-UK14 citations83
US8283229B2Oct 9, 2012
Methods of fabricating vertical channel transistors
KIM KANG-UK7 citations83
US8786009B2Jul 22, 2014
Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same
KIM KANG-UK1 citations51