Inventor
HAMADA YOSHITAKA
JP44 patents
⚠️ This page may combine multiple inventors who share the name “HAMADA YOSHITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
22 patentsUS6485831B1Nov 26, 2002
Conductive powder and making process
SHINETSU CHEMICAL CO81 citations96
US7754330B2Jul 13, 2010
Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device
SHINETSU CHEMICAL CO24 citations93
US4981988AJan 1, 1991
Organosiloxane compound with one end stopped with an aminoalkyl group and a manufacturing method thereof
SHINETSU CHEMICAL CO24 citations93
US7923522B2Apr 12, 2011
Process for preparing a dispersion liquid of zeolite fine particles
SHINETSU CHEMICAL CO17 citations84
US7651829B2Jan 26, 2010
Positive resist material and pattern formation method using the same
SHINETSU CHEMICAL CO9 citations84
US7485690B2Feb 3, 2009
Sacrificial film-forming composition, patterning process, sacrificial film and removal method
SHINETSU CHEMICAL CO8 citations84
US7417104B2Aug 26, 2008
Porous film-forming composition, patterning process, and porous sacrificial film
SHINETSU CHEMICAL CO9 citations84
US6680081B2Jan 20, 2004
Conductive powder and making process
SHINETSU CHEMICAL CO5 citations74
US6114500ASep 5, 2000
Purification of organic silicon polymer
SHINETSU CHEMICAL CO11 citations74
US5955192ASep 21, 1999
Conductive circuit board and method for making
SHINETSU CHEMICAL CO8 citations74
US4950726AAug 21, 1990
Organopolysiloxane compound having liquid-crystalline phase
SHINETSU CHEMICAL CO9 citations74
US5554710ASep 10, 1996
Conductive polymers and process for preparing the same
SHINETSU CHEMICAL CO6 citations73
US7402621B2Jul 22, 2008
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device
SHINETSU CHEMICAL CO7 citations71
US7745094B2Jun 29, 2010
Resist composition and patterning process using the same
SHINETSU CHEMICAL CO4 citations63
US7385021B2Jun 10, 2008
Sacrificial film-forming composition, patterning process, sacrificial film and removal method
SHINETSU CHEMICAL CO6 citations63
US7265234B2Sep 4, 2007
Silsesquioxane compound mixture, method of making, resist composition, and patterning process
SHINETSU CHEMICAL CO4 citations63
US5113002AMay 12, 1992
Polysilane copolymers and method for preparing same
SHINETSU CHEMICAL CO5 citations62
US9018095B2Apr 28, 2015
Formation of conductive circuit, conductive circuit, and conductive ink composition
SHINETSU CHEMICAL CO1 citations52
US7786022B2Aug 31, 2010
Method for forming insulating film with low dielectric constant
SHINETSU CHEMICAL CO1 citations52
US7638256B2Dec 29, 2009
Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process
SHINETSU CHEMICAL CO0 citations52
US7550247B2Jun 23, 2009
Resist composition and patterning process
SHINETSU CHEMICAL CO1 citations52
US7332446B2Feb 19, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device
SHINETSU CHEMICAL CO1 citations52
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
8 patentsUS7132473B2Nov 7, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7119354B2Oct 10, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7084505B2Aug 1, 2006
Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US6930393B2Aug 16, 2005
Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US7357961B2Apr 15, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7239018B2Jul 3, 2007
Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
US7126208B2Oct 24, 2006
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7341775B2Mar 11, 2008
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
HAMADA YOSHITAKA
5 patentsUS8277600B2Oct 2, 2012
High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
HAMADA YOSHITAKA19 citations83
US8461367B2Jun 11, 2013
Preparation process of trisilylamine
HAMADA YOSHITAKA4 citations61
US8546597B2Oct 1, 2013
Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film
HAMADA YOSHITAKA0 citations51
US8537808B2Sep 17, 2013
SIP telephone set, and file transfer system, file transfer method and file transfer program thereof
HAMADA YOSHITAKA0 citations41
US8604126B2Dec 10, 2013
Silicone resin composition and optical material
HAMADA YOSHITAKA0 citations40
MIPS CO LTD
3 patentsUS4780603AOct 25, 1988
Integrated circuit card and connector arrangement using same
MIPS CO LTD91 citations96
US4794243ADec 27, 1988
Integrated circuit card with increased number of connecting terminals
MIPS CO LTD40 citations92
US4766480AAug 23, 1988
Integrated circuit card having memory errasable with ultraviolet ray
MIPS CO LTD26 citations92