P

Inventor

HAMADA YOSHITAKA

JP44 patents
⚠️ This page may combine multiple inventors who share the name “HAMADA YOSHITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU CHEMICAL CO

22 patents
US6485831B1Nov 26, 2002

Conductive powder and making process

SHINETSU CHEMICAL CO81 citations96
US7754330B2Jul 13, 2010

Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device

SHINETSU CHEMICAL CO24 citations93
US4981988AJan 1, 1991

Organosiloxane compound with one end stopped with an aminoalkyl group and a manufacturing method thereof

SHINETSU CHEMICAL CO24 citations93
US7923522B2Apr 12, 2011

Process for preparing a dispersion liquid of zeolite fine particles

SHINETSU CHEMICAL CO17 citations84
US7651829B2Jan 26, 2010

Positive resist material and pattern formation method using the same

SHINETSU CHEMICAL CO9 citations84
US7485690B2Feb 3, 2009

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

SHINETSU CHEMICAL CO8 citations84
US7417104B2Aug 26, 2008

Porous film-forming composition, patterning process, and porous sacrificial film

SHINETSU CHEMICAL CO9 citations84
US6680081B2Jan 20, 2004

Conductive powder and making process

SHINETSU CHEMICAL CO5 citations74
US6114500ASep 5, 2000

Purification of organic silicon polymer

SHINETSU CHEMICAL CO11 citations74
US5955192ASep 21, 1999

Conductive circuit board and method for making

SHINETSU CHEMICAL CO8 citations74
US4950726AAug 21, 1990

Organopolysiloxane compound having liquid-crystalline phase

SHINETSU CHEMICAL CO9 citations74
US5554710ASep 10, 1996

Conductive polymers and process for preparing the same

SHINETSU CHEMICAL CO6 citations73
US7402621B2Jul 22, 2008

Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device

SHINETSU CHEMICAL CO7 citations71
US7745094B2Jun 29, 2010

Resist composition and patterning process using the same

SHINETSU CHEMICAL CO4 citations63
US7385021B2Jun 10, 2008

Sacrificial film-forming composition, patterning process, sacrificial film and removal method

SHINETSU CHEMICAL CO6 citations63
US7265234B2Sep 4, 2007

Silsesquioxane compound mixture, method of making, resist composition, and patterning process

SHINETSU CHEMICAL CO4 citations63
US5113002AMay 12, 1992

Polysilane copolymers and method for preparing same

SHINETSU CHEMICAL CO5 citations62
US9018095B2Apr 28, 2015

Formation of conductive circuit, conductive circuit, and conductive ink composition

SHINETSU CHEMICAL CO1 citations52
US7786022B2Aug 31, 2010

Method for forming insulating film with low dielectric constant

SHINETSU CHEMICAL CO1 citations52
US7638256B2Dec 29, 2009

Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process

SHINETSU CHEMICAL CO0 citations52
US7550247B2Jun 23, 2009

Resist composition and patterning process

SHINETSU CHEMICAL CO1 citations52
US7332446B2Feb 19, 2008

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device

SHINETSU CHEMICAL CO1 citations52

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

8 patents
US7132473B2Nov 7, 2006

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7119354B2Oct 10, 2006

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7084505B2Aug 1, 2006

Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US6930393B2Aug 16, 2005

Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US7357961B2Apr 15, 2008

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7239018B2Jul 3, 2007

Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalyst

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
US7126208B2Oct 24, 2006

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7341775B2Mar 11, 2008

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52

HAMADA YOSHITAKA

5 patents

MIPS CO LTD

3 patents

IBM

1 patent

HITACHI INT ELECTRIC INC

1 patent

MITA KOZO

1 patent

YAGIHASHI FUJIO

1 patent

HEAT SYSTEM RESEARCH & INDUSTR

1 patent

NAKASHIMA MUTSUO

1 patent