P

Inventor

YU LAN

US76 patents
⚠️ This page may combine multiple inventors who share the name “YU LAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

30 patents
US10797163B1Oct 6, 2020

Leakage control for gate-all-around field-effect transistor devices

IBM26 citations94
US11177258B2Nov 16, 2021

Stacked nanosheet CFET with gate all around structure

IBM15 citations86
US10910470B1Feb 2, 2021

Nanosheet transistors with inner airgaps

IBM5 citations84
US11557651B2Jan 17, 2023

Nanosheet transistors with inner airgaps

IBM2 citations73
US11289573B2Mar 29, 2022

Contact resistance reduction in nanosheet device structure

IBM5 citations73
US11282838B2Mar 22, 2022

Stacked gate structures

IBM2 citations73
US11189713B2Nov 30, 2021

Nanosheet transistor having wrap-around bottom isolation

IBM3 citations73
US11189725B2Nov 30, 2021

VTFET with cell height constraints

IBM2 citations73
US11177369B2Nov 16, 2021

Stacked vertical field effect transistor with self-aligned junctions

IBM2 citations73
US11164870B2Nov 2, 2021

Stacked upper fin and lower fin transistor with separate gate

IBM4 citations73
US11075334B2Jul 27, 2021

Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode

IBM4 citations73
US11024670B1Jun 1, 2021

Forming an MRAM device over a transistor

IBM3 citations73
US10943989B2Mar 9, 2021

Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization

IBM3 citations73
US11239119B2Feb 1, 2022

Replacement bottom spacer for vertical transport field effect transistors

IBM2 citations72
US12176416B2Dec 24, 2024

Stacked nanosheet transistor with defect free channel

IBM0 citations63
US12002753B2Jun 4, 2024

Electronic fuse with passive two-terminal phase change material and method of fabrication

IBM0 citations63
US11978796B2May 7, 2024

Contact and isolation in monolithically stacked VTFET

IBM0 citations63
US11942557B2Mar 26, 2024

Nanosheet transistor with enhanced bottom isolation

IBM0 citations63
US11894442B2Feb 6, 2024

Full nanosheet airgap spacer

IBM0 citations63
US11749744B2Sep 5, 2023

Fin structure for vertical transport field effect transistor

IBM0 citations63
US11715794B2Aug 1, 2023

VTFET with cell height constraints

IBM0 citations63
US11710521B2Jul 25, 2023

Static random-access memory cell design

IBM0 citations63
US11705504B2Jul 18, 2023

Stacked nanosheet transistor with defect free channel

IBM0 citations63
US11615842B2Mar 28, 2023

Mixed conducting volatile memory element for accelerated writing of nonvolatile memristive device

IBM0 citations63
US11450659B2Sep 20, 2022

On-chip decoupling capacitor

IBM0 citations63
US11094798B2Aug 17, 2021

Vertical FET with symmetric junctions

IBM0 citations63
US11024369B1Jun 1, 2021

Static random-access memory cell design

IBM0 citations63
US11004984B2May 11, 2021

Low resistivity epitaxially formed contact region for nanosheet external resistance reduction

IBM0 citations63
US11955369B2Apr 9, 2024

Recessed local interconnect formed over self-aligned double diffusion break

IBM0 citations62
US11894423B2Feb 6, 2024

Contact resistance reduction in nanosheet device structure

IBM0 citations62

FORD GLOBAL TECH LLC

10 patents

QUALCOMM INC

6 patents

APPLIED MATERIALS INC

3 patents

INT BUSINESS MACHINES CORPORATION

1 patent

Showing the top 50 of 76 patents by PatentIndex Score.