Inventor
HUANG CHIH-SHU
TW22 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHIH-SHU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FORMOSA EPITAXY INC
7 patentsUS9123868B2Sep 1, 2015
Light emitting element and illumination device thereof
FORMOSA EPITAXY INC16 citations92
US9741699B2Aug 22, 2017
Light emitting device
FORMOSA EPITAXY INC5 citations83
US9220135B2Dec 22, 2015
Light emitting component and light emitting device using same
FORMOSA EPITAXY INC8 citations83
US9166116B2Oct 20, 2015
Light emitting device
FORMOSA EPITAXY INC6 citations83
US9065022B2Jun 23, 2015
Light emitting apparatus
FORMOSA EPITAXY INC7 citations83
US9661698B2May 23, 2017
Light emitting component and light emitting device using same
FORMOSA EPITAXY INC3 citations72
US9117589B2Aug 25, 2015
Capacitor structure and stack-type capacitor structure
FORMOSA EPITAXY INC2 citations63
EPISTAR CORP
7 patentsUS10247395B2Apr 2, 2019
Light emitting device
EPISTAR CORP5 citations83
US10670244B2Jun 2, 2020
Light emitting device
EPISTAR CORP2 citations72
US10306714B2May 28, 2019
Semiconductor component and light emitting device using same
EPISTAR CORP1 citations72
US11808436B2Nov 7, 2023
Light emitting apparatus
EPISTAR CORP0 citations62
US11255524B2Feb 22, 2022
Light emitting device
EPISTAR CORP0 citations62
USRE48798EOct 26, 2021
LED driver and illumination system related to the same
EPISTAR CORP0 citations60
US9894719B2Feb 13, 2018
LED driver and illumination system related to the same
EPISTAR CORP0 citations50
HUANG CHIH SHU
7 patentsUS11195943B2Dec 7, 2021
Epitaxial structure of Ga-face group III nitride, active device, and gate protection device thereof
HUANG CHIH SHU3 citations72
US10529821B2Jan 7, 2020
Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
HUANG CHIH SHU2 citations72
US10475913B2Nov 12, 2019
Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion
HUANG CHIH SHU3 citations72
US11469308B2Oct 11, 2022
Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
HUANG CHIH SHU0 citations61
US10886381B2Jan 5, 2021
Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
HUANG CHIH SHU1 citations61
US11605731B2Mar 14, 2023
Epitaxial structure of N-face group III nitride, active device, and gate protection device thereof
HUANG CHIH SHU0 citations51
US10833163B2Nov 10, 2020
Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
HUANG CHIH SHU0 citations51