Inventor
LEE CHWAN-YING
TW37 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHWAN-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IND TECH RES INST
18 patentsUS6436816B1Aug 20, 2002
Method of electroless plating copper on nitride barrier
IND TECH RES INST347 citations99
US6180523B1Jan 30, 2001
Copper metallization of USLI by electroless process
IND TECH RES INST357 citations99
US6030877AFeb 29, 2000
Electroless gold plating method for forming inductor structures
IND TECH RES INST210 citations99
US5801100ASep 1, 1998
Electroless copper plating method for forming integrated circuit structures
IND TECH RES INST99 citations98
US5917244AJun 29, 1999
Integrated circuit inductor structure formed employing copper containing conductor winding layer clad with nickel containing conductor layer
IND TECH RES INST72 citations96
US5776813AJul 7, 1998
Process to manufacture a vertical gate-enhanced bipolar transistor
IND TECH RES INST85 citations96
US6713377B2Mar 30, 2004
Method of electroless plating copper on nitride barrier
IND TECH RES INST21 citations92
US6406743B1Jun 18, 2002
Nickel-silicide formation by electroless Ni deposition on polysilicon
IND TECH RES INST35 citations92
US6180478B1Jan 30, 2001
Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance
IND TECH RES INST32 citations92
US8841721B2Sep 23, 2014
Stepped trench MOSFET and method of fabricating the same
IND TECH RES INST16 citations84
US6589849B1Jul 8, 2003
Method for fabricating epitaxy base bipolar transistor
IND TECH RES INST15 citations84
US8766279B1Jul 1, 2014
SiC-based trench-type schottky device
IND TECH RES INST15 citations82
US6660625B2Dec 9, 2003
Method of electroless plating copper on nitride barrier
IND TECH RES INST9 citations74
US6228733B1May 8, 2001
Non-selective epitaxial depostion technology
IND TECH RES INST14 citations74
US6046107AApr 4, 2000
Electroless copper employing hypophosphite as a reducing agent
IND TECH RES INST6 citations63
US9209293B2Dec 8, 2015
Integrated device having MOSFET cell array embedded with barrier Schottky diode
IND TECH RES INST3 citations62
US8878327B2Nov 4, 2014
Schottky barrier device having a plurality of double-recessed trenches
IND TECH RES INST2 citations62
US8956963B2Feb 17, 2015
Schottky barrier diode and fabricating method thereof
IND TECH RES INST1 citations48
HESTIA POWER INC
11 patentsUS9368650B1Jun 14, 2016
SiC junction barrier controlled schottky rectifier
HESTIA POWER INC21 citations92
US9246016B1Jan 26, 2016
Silicon carbide semiconductor device
HESTIA POWER INC11 citations83
US10483389B2Nov 19, 2019
Silicon carbide semiconductor device
HESTIA POWER INC6 citations72
US10418476B2Sep 17, 2019
Silicon carbide semiconductor device
HESTIA POWER INC3 citations72
US10020368B2Jul 10, 2018
Silicon carbide semiconductor element and manufacturing method thereof
HESTIA POWER INC2 citations71
US9761703B1Sep 12, 2017
Wide bandgap semiconductor device with adjustable voltage level
HESTIA POWER INC3 citations71
US9373713B2Jun 21, 2016
Silicon carbide semiconductor device and method of manufacture thereof
HESTIA POWER INC4 citations71
US10396774B2Aug 27, 2019
Intelligent power module operable to be driven by negative gate voltage
HESTIA POWER INC1 citations62
US9018640B1Apr 28, 2015
Silicon carbide power device equipped with termination structure
HESTIA POWER INC2 citations62
US10497777B2Dec 3, 2019
Semiconductor power device
HESTIA POWER INC0 citations41
US9685552B2Jun 20, 2017
Silicon carbide field effect transistor
HESTIA POWER INC0 citations40