Inventor

VRTIS RAYMOND NICHOLAS

US52 patents

⚠️ This page may combine multiple inventors who share the name “VRTIS RAYMOND NICHOLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VRTIS RAYMOND NICHOLAS

AIR PROD & CHEM

Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants

Porous low dielectric constant compositions and methods for making and using same

Mechanical enhancement of dense and porous organosilicate materials by UV exposure

Organosilicon precursors for interlayer dielectric films with low dielectric constants

Nonfunctionalized poly(arylene ethers)

Low dielectric constant material and method of processing by CVD

Non-thermal process for forming porous low dielectric constant films

Nonfunctionalized poly(arylene ether) dielectrics

Activated chemical process for enhancing material properties of dielectric films

Mechanical enhancement of dense and porous organosilicate materials by UV exposure

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Mechanical enhancement of dense and porous organosilicate materials by UV exposure

Non-thermal process for forming porous low dielectric constant films

Alkyl-alkoxysilacyclic compounds

Method for removing carbon-containing residues from a substrate

Method and precursors for manufacturing 3D devices

Low dielectric constant material and method of processing by CVD

Barrier materials for display devices

Adhesion to copper and copper electromigration resistance

Deposition of titanium amides

Deposition of titanium amides

Materials and methods of forming controlled void

Materials and methods of forming controlled void

Low K precursors providing superior integration attributes

Composition for treating surface of substrate, method and device

VERSUM MAT US LLC

Precursors and flowable CVD methods for making low-K films to fill surface features

Use of silyl bridged alkyl compounds for dense OSG films

Compositions and methods for making silicon containing films

Alkyl-alkoxysilacyclic compounds

Compositions and methods using same for deposition of silicon-containing film

Precursors and flowable CVD methods for making low-K films to fill surface features

Precursors and flowable CVD methods for making low-k films to fill surface features

Compositions and methods using same for deposition of silicon-containing film

Alkoxysilacyclic or acyloxysilacyclic compounds and methods for depositing films using same

Silacyclic compounds and methods for depositing silicon-containing films using same

Silacycloalkane compounds and methods for depositing silicon containing films using same

Precursors and flowable CVD methods for making low-K films to fill surface features

Compositions and methods using same for deposition of silicon-containing film

Additives to enhance the properties of dielectric films

Use of silicon structure former with organic substituted hardening additive compounds for dense OSG films

VRTIS RAYMOND NICHOLAS

Materials and methods of forming controlled void

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Methods for using porogens for low k porous organosilica glass films

LEE ERIC M

Chemical vapor deposition method

HAAS MARY KATHRYN

Low k precursors providing superior integration attributes

MATZ LAURA M

Dielectric barrier deposition using oxygen containing precursor

VINCENT JEAN LOUISE

Mechanical enhancer additives for low dielectric films

MALLIKARJUNAN ANUPAMA

Dielectric barrier deposition using nitrogen containing precursor