Inventor
MASUDUZZAMAN MUHAMMAD
US27 patents
⚠️ This page may combine multiple inventors who share the name “MASUDUZZAMAN MUHAMMAD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
18 patentsUS9842657B1Dec 12, 2017
Multi-state program using controlled weak boosting for non-volatile memory
SANDISK TECHNOLOGIES LLC28 citations93
US9779832B1Oct 3, 2017
Pulsed control line biasing in memory
SANDISK TECHNOLOGIES LLC7 citations82
US11139038B1Oct 5, 2021
Neighboring or logical minus word line dependent verify with sense time in programming of non-volatile memory
SANDISK TECHNOLOGIES LLC4 citations73
US11475967B1Oct 18, 2022
Modified verify in a memory device
SANDISK TECHNOLOGIES LLC4 citations71
US11574693B2Feb 7, 2023
Memory apparatus and method of operation using periodic normal erase dummy cycle to improve stripe erase endurance and data retention
SANDISK TECHNOLOGIES LLC0 citations62
US11423993B2Aug 23, 2022
Bi-directional sensing in a memory
SANDISK TECHNOLOGIES LLC0 citations62
US11322213B2May 3, 2022
Enhanced multistate verify techniques in a memory device
SANDISK TECHNOLOGIES LLC0 citations62
US11081184B2Aug 3, 2021
Method of concurrent multi-state programming of non-volatile memory with bit line voltage step up
SANDISK TECHNOLOGIES LLC0 citations62
US10984876B2Apr 20, 2021
Temperature based programming in memory
SANDISK TECHNOLOGIES LLC1 citations62
US11417393B2Aug 16, 2022
Two-stage programming using variable step voltage (DVPGM) for non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations61
US12142315B2Nov 12, 2024
Low power multi-level cell (MLC) programming in non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations52
US12112800B2Oct 8, 2024
High speed multi-level cell (MLC) programming in non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations52
US12079496B2Sep 3, 2024
Bundle multiple timing parameters for fast SLC programming
SANDISK TECHNOLOGIES LLC0 citations52
US12057168B2Aug 6, 2024
Neighbor aware multi-bias programming in scaled BICS
SANDISK TECHNOLOGIES LLC0 citations52
US11887677B2Jan 30, 2024
Quick pass write programming techniques in a memory device
SANDISK TECHNOLOGIES LLC0 citations52
US12205657B2Jan 21, 2025
Hybrid smart verify for QLC/TLC die
SANDISK TECHNOLOGIES LLC0 citations51
US12057175B2Aug 6, 2024
Memory apparatus and method of operation using state dependent strobe tier scan to reduce peak ICC
SANDISK TECHNOLOGIES LLC0 citations51
US10217520B2Feb 26, 2019
Pulsed control line biasing in memory
SANDISK TECHNOLOGIES LLC0 citations50
WESTERN DIGITAL TECH INC
4 patentsUS12327046B2Jun 10, 2025
Data retention-specific refresh read
WESTERN DIGITAL TECH INC0 citations62
US11830555B2Nov 28, 2023
Bias for data retention in fuse ROM and flash memory
WESTERN DIGITAL TECH INC0 citations62
US11776634B2Oct 3, 2023
Pulsed bias for power-up or read recovery
WESTERN DIGITAL TECH INC0 citations62
US12354704B2Jul 8, 2025
Active current consumption save mode for non-volatile memory using fast programming
WESTERN DIGITAL TECH INC0 citations50
SANDISK TECHNOLOGIES INC
3 patentsUS10014063B2Jul 3, 2018
Smart skip verify mode for programming a memory device
SANDISK TECHNOLOGIES INC43 citations94
US9711211B2Jul 18, 2017
Dynamic threshold voltage compaction for non-volatile memory
SANDISK TECHNOLOGIES INC4 citations73
US12462876B2Nov 4, 2025
Single-level cell pump skip program operation preliminary period timing optimization for non-volatile memory
SANDISK TECHNOLOGIES INC0 citations52