Inventor
CHEN KUAN-JUNG
TW26 patents
⚠️ This page may combine multiple inventors who share the name “CHEN KUAN-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS11688666B2Jun 27, 2023
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11508628B2Nov 22, 2022
Method for forming a crystalline protective polysilicon layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11031320B2Jun 8, 2021
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12020933B2Jun 25, 2024
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11955484B2Apr 9, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527406B2Dec 13, 2022
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11404413B2Aug 2, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12068227B2Aug 20, 2024
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935795B2Mar 19, 2024
Method for forming a crystalline protective polysilicon layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12563826B2Feb 24, 2026
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12463035B2Nov 4, 2025
Trench etching process for photoresist line roughness improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074169B2Aug 27, 2024
Structures and methods for trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11894381B2Feb 6, 2024
Structures and methods for trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11271111B2Mar 8, 2022
Source/drain structure with barrier in FinFET device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11145760B2Oct 12, 2021
Structure having improved fin critical dimension control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12033951B2Jul 9, 2024
Alignment mark structure and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12211910B2Jan 28, 2025
Bipolar junction transistor (BJT) and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51