Inventor
LIN SHIUAN-JENG
TW25 patents
⚠️ This page may combine multiple inventors who share the name “LIN SHIUAN-JENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11688666B2Jun 27, 2023
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11407636B2Aug 9, 2022
Inter-poly connection for parasitic capacitor and die size improvement
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11031320B2Jun 8, 2021
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10155656B2Dec 18, 2018
Inter-poly connection for parasitic capacitor and die size improvement
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US9966427B2May 8, 2018
Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12583740B2Mar 24, 2026
Inter-poly connection for parasitic capacitor and die size improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068227B2Aug 20, 2024
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942543B2Mar 26, 2024
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879236B2Dec 29, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12074162B2Aug 27, 2024
Structure and formation method of semiconductor device with capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12062686B2Aug 13, 2024
Structure and formation method of semiconductor device with capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12033951B2Jul 9, 2024
Alignment mark structure and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12211910B2Jan 28, 2025
Bipolar junction transistor (BJT) and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9997601B2Jun 12, 2018
Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10748986B2Aug 18, 2020
Structure and formation method of semiconductor device with capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10586705B2Mar 10, 2020
Fluorine doped non-volatile memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49