Inventor
CHIANG WEN-CHIH
TW42 patents
Patents
42 patentsUS10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11183572B2Nov 23, 2021
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11888074B2Jan 30, 2024
Flash memory device with three-dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11688666B2Jun 27, 2023
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11658248B2May 23, 2023
Flash memory device with three-dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11508628B2Nov 22, 2022
Method for forming a crystalline protective polysilicon layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11031320B2Jun 8, 2021
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11769837B2Sep 26, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11682736B2Jun 20, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11257963B1Feb 22, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US11563127B2Jan 24, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12402362B2Aug 26, 2025
Flash memory device with three-dimensional half structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218253B2Feb 4, 2025
Flash memory device with three dimensional half flash structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199159B2Jan 14, 2025
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068227B2Aug 20, 2024
Structures and methods for reducing process charging damages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942543B2Mar 26, 2024
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935795B2Mar 19, 2024
Method for forming a crystalline protective polysilicon layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728399B2Aug 15, 2023
Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543348B2Feb 3, 2026
Transistor and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12272756B2Apr 8, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12249657B2Mar 11, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12113135B2Oct 8, 2024
Transistor and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074169B2Aug 27, 2024
Structures and methods for trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12051755B2Jul 30, 2024
Transistor and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11894381B2Feb 6, 2024
Structures and methods for trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11594645B1Feb 28, 2023
Transistor and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10879236B2Dec 29, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12520521B2Jan 6, 2026
Method of forming high voltage transistor and structure resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12532678B2Jan 20, 2026
Method for manufacturing semiconductor structure and semiconductor structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12261228B2Mar 25, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11903193B2Feb 13, 2024
Two dimensional structure to control flash operation and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11792981B2Oct 17, 2023
Two dimensional structure to control flash operation and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12308271B2May 20, 2025
Semiconductor wafer processing system and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11901207B2Feb 13, 2024
Semiconductor wafer processing system and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10586705B2Mar 10, 2020
Fluorine doped non-volatile memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49