Inventor
FUJISAKI YOSHIHISA
JP35 patents
⚠️ This page may combine multiple inventors who share the name “FUJISAKI YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
27 patentsUS6342712B1Jan 29, 2002
Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation
HITACHI LTD57 citations96
US6097051AAug 1, 2000
Semiconductor device and method of fabricating
HITACHI LTD53 citations96
US5416331AMay 16, 1995
Surface atom fabrication method and apparatus
HITACHI LTD69 citations96
US4716127ADec 29, 1987
Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species
HITACHI LTD29 citations93
US6800889B2Oct 5, 2004
Semiconductor device and fabrication method thereof
HITACHI LTD21 citations92
US6635913B2Oct 21, 2003
Semiconductor storage device
HITACHI LTD14 citations92
US6432767B2Aug 13, 2002
Method of fabricating semiconductor device
HITACHI LTD45 citations92
US6396092B1May 28, 2002
Semiconductor device and method for manufacturing the same
HITACHI LTD28 citations92
US6380574B1Apr 30, 2002
Ferroelectric capacitor with a self-aligned diffusion barrier
HITACHI LTD25 citations92
US5689494ANov 18, 1997
Surface atom fabrication method and apparatus
HITACHI LTD22 citations92
US4775980AOct 4, 1988
Distributed-feedback semiconductor laser device
HITACHI LTD28 citations92
US4665528AMay 12, 1987
Distributed-feedback semiconductor laser device
HITACHI LTD25 citations92
US5481120AJan 2, 1996
Semiconductor device and its fabrication method
HITACHI LTD36 citations91
US6309894B1Oct 30, 2001
Semiconductor memory and method of manufacturing the same
HITACHI LTD25 citations90
US6632721B1Oct 14, 2003
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
HITACHI LTD13 citations84
US6462368B2Oct 8, 2002
Ferroelectric capacitor with a self-aligned diffusion barrier
HITACHI LTD13 citations74
US6338994B1Jan 15, 2002
Semiconductor device and method of fabricating thereof
HITACHI LTD7 citations74
US6818523B2Nov 16, 2004
Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer
HITACHI LTD5 citations73
US6420192B2Jul 16, 2002
Method of manufacturing semiconductor memory
HITACHI LTD10 citations71
US6144052ANov 7, 2000
Semiconductor device and its manufacture
HITACHI LTD13 citations71
US6294804B1Sep 25, 2001
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
HITACHI LTD2 citations61
US5770873AJun 23, 1998
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
HITACHI LTD3 citations61
US7767997B2Aug 3, 2010
Semiconductor device with solid electrolyte switching
HITACHI LTD6 citations58
US6630697B2Oct 7, 2003
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
HITACHI LTD0 citations50
US6297523B1Oct 2, 2001
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same
HITACHI LTD1 citations50
US5733805AMar 31, 1998
Method of fabricating semiconductor device utilizing a GaAs single crystal
HITACHI LTD0 citations50
US9911916B2Mar 6, 2018
Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin film
HITACHI LTD0 citations42
RENESAS ELECTRONICS CORP
3 patentsUS7864568B2Jan 4, 2011
Semiconductor storage device
RENESAS ELECTRONICS CORP222 citations99
US8000126B2Aug 16, 2011
Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
RENESAS ELECTRONICS CORP12 citations84
US7859896B2Dec 28, 2010
Semiconductor device
RENESAS ELECTRONICS CORP18 citations84
RENESAS TECH CORP
3 patentsUS6822276B1Nov 23, 2004
Memory structure with a ferroelectric capacitor
RENESAS TECH CORP5 citations63
US7256437B2Aug 14, 2007
Semiconductor storage device which includes a hydrogen diffusion inhibiting layer
RENESAS TECH CORP2 citations62
US6815741B2Nov 9, 2004
III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal
RENESAS TECH CORP0 citations50