Inventor
ISMAIL KHALID EZZELDIN
US19 patents
Patents
19 patentsUS6059895AMay 9, 2000
Strained Si/SiGe layers on insulator
IBM397 citations99
US6013134AJan 11, 2000
Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
IBM155 citations99
US5906951AMay 25, 1999
Strained Si/SiGe layers on insulator
IBM304 citations99
US5714777AFeb 3, 1998
Si/SiGe vertical junction field effect transistor
IBM218 citations99
US6425951B1Jul 30, 2002
Advance integrated chemical vapor deposition (AICVD) for semiconductor
IBM85 citations98
US6350993B1Feb 26, 2002
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM404 citations98
US6251751B1Jun 26, 2001
Bulk and strained silicon on insulator using local selective oxidation
IBM239 citations98
US6096590AAug 1, 2000
Scalable MOS field effect transistor
IBM184 citations98
US5963817AOct 5, 1999
Bulk and strained silicon on insulator using local selective oxidation
IBM251 citations98
US5808344ASep 15, 1998
Single-transistor logic and CMOS inverters
IBM95 citations98
US7906413B2Mar 15, 2011
Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
IBM137 citations97
US6858502B2Feb 22, 2005
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM39 citations95
US6723621B1Apr 20, 2004
Abrupt delta-like doping in Si and SiGe films by UHV-CVD
IBM45 citations95
US7083998B2Aug 1, 2006
Si/SiGe optoelectronic integrated circuits
IBM20 citations91
US6784466B2Aug 31, 2004
Si/SiGe optoelectronic integrated circuits
IBM34 citations91
US5955759ASep 21, 1999
Reduced parasitic resistance and capacitance field effect transistor
IBM47 citations91
US6870232B1Mar 22, 2005
Scalable MOS field effect transistor
IBM9 citations73
US7067855B2Jun 27, 2006
Semiconductor structure having an abrupt doping profile
IBM10 citations72
US7084431B2Aug 1, 2006
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM3 citations62