Inventor
CHEN EUGENE YOUJUN
US28 patents
⚠️ This page may combine multiple inventors who share the name “CHEN EUGENE YOUJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GRANDIS INC
15 patentsUS7515457B2Apr 7, 2009
Current driven memory cells having enhanced current and enhanced current symmetry
GRANDIS INC224 citations99
US7489541B2Feb 10, 2009
Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
GRANDIS INC157 citations99
US7345912B2Mar 18, 2008
Method and system for providing a magnetic memory structure utilizing spin transfer
GRANDIS INC236 citations99
US7286395B2Oct 23, 2007
Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
GRANDIS INC196 citations99
US7272034B1Sep 18, 2007
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
GRANDIS INC243 citations99
US7272035B1Sep 18, 2007
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
GRANDIS INC251 citations99
US7430135B2Sep 30, 2008
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
GRANDIS INC218 citations98
US7379327B2May 27, 2008
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
GRANDIS INC243 citations97
US7859034B2Dec 28, 2010
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
GRANDIS INC24 citations92
US7760474B1Jul 20, 2010
Magnetic element utilizing free layer engineering
GRANDIS INC23 citations92
US7663848B1Feb 16, 2010
Magnetic memories utilizing a magnetic element having an engineered free layer
GRANDIS INC31 citations92
US7973349B2Jul 5, 2011
Magnetic device having multilayered free ferromagnetic layer
GRANDIS INC20 citations84
US7916433B2Mar 29, 2011
Magnetic element utilizing free layer engineering
GRANDIS INC12 citations84
US7777261B2Aug 17, 2010
Magnetic device having stabilized free ferromagnetic layer
GRANDIS INC13 citations84
US7791931B2Sep 7, 2010
Current driven memory cells having enhanced current and enhanced current symmetry
GRANDIS INC2 citations63
MOTOROLA INC
5 patentsUS6469926B1Oct 22, 2002
Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
MOTOROLA INC179 citations99
US6376260B1Apr 23, 2002
Magnetic element with improved field response and fabricating method thereof
MOTOROLA INC133 citations98
US6292389B1Sep 18, 2001
Magnetic element with improved field response and fabricating method thereof
MOTOROLA INC167 citations98
US6233172B1May 15, 2001
Magnetic element with dual magnetic states and fabrication method thereof
MOTOROLA INC205 citations98
US6211090B1Apr 3, 2001
Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
MOTOROLA INC312 citations98
CHEN EUGENE YOUJUN
4 patentsUS8779538B2Jul 15, 2014
Magnetic tunneling junction seed, capping, and spacer layer materials
CHEN EUGENE YOUJUN52 citations97
US8072800B2Dec 6, 2011
Magnetic element having perpendicular anisotropy with enhanced efficiency
CHEN EUGENE YOUJUN54 citations96
US8456898B2Jun 4, 2013
Magnetic element having perpendicular anisotropy with enhanced efficiency
CHEN EUGENE YOUJUN34 citations91
US8406045B1Mar 26, 2013
Three terminal magnetic element
CHEN EUGENE YOUJUN10 citations84
FREESCALE SEMICONDUCTOR INC
3 patentsUS6835423B2Dec 28, 2004
Method of fabricating a magnetic element with insulating veils
FREESCALE SEMICONDUCTOR INC141 citations98
US6750068B2Jun 15, 2004
Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer
FREESCALE SEMICONDUCTOR INC36 citations92
US6912107B2Jun 28, 2005
Magnetic element with insulating veils and fabricating method thereof
FREESCALE SEMICONDUCTOR INC4 citations62