Inventor
GAJERA NEVIL
US17 patents
⚠️ This page may combine multiple inventors who share the name “GAJERA NEVIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
16 patentsUS7567472B2Jul 28, 2009
Memory block testing
MICRON TECHNOLOGY INC23 citations91
US10964385B1Mar 30, 2021
Restoring memory cell threshold voltages
MICRON TECHNOLOGY INC9 citations85
US11962327B2Apr 16, 2024
Iterative decoding technique for correcting DRAM device failures
MICRON TECHNOLOGY INC3 citations71
US11170853B2Nov 9, 2021
Modified write voltage for memory devices
MICRON TECHNOLOGY INC2 citations71
US11923007B2Mar 5, 2024
Dirty write on power off
MICRON TECHNOLOGY INC0 citations62
US11545216B2Jan 3, 2023
Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device
MICRON TECHNOLOGY INC0 citations62
US11508437B2Nov 22, 2022
Restoring memory cell threshold voltages
MICRON TECHNOLOGY INC0 citations62
US10943657B1Mar 9, 2021
Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device
MICRON TECHNOLOGY INC0 citations62
US12019516B2Jun 25, 2024
Instant write scheme with delayed parity/raid
MICRON TECHNOLOGY INC0 citations61
US12013756B2Jun 18, 2024
Method and memory system for writing data to dram submodules based on the data traffic demand
MICRON TECHNOLOGY INC0 citations61
US11705197B2Jul 18, 2023
Modified write voltage for memory devices
MICRON TECHNOLOGY INC0 citations61
US12316349B2May 27, 2025
Iterative decoding technique for correcting DRAM device failures
MICRON TECHNOLOGY INC0 citations59
US12170531B2Dec 17, 2024
Iterative decoder for correcting dram device failures
MICRON TECHNOLOGY INC0 citations59
US7512507B2Mar 31, 2009
Die based trimming
MICRON TECHNOLOGY INC5 citations55
US12555623B2Feb 17, 2026
Address mapping for improved memory reliability
MICRON TECHNOLOGY INC0 citations50
US12032443B2Jul 9, 2024
Shadow DRAM with CRC+RAID architecture, system and method for high RAS feature in a CXL drive
MICRON TECHNOLOGY INC0 citations50