Inventor
YOUNG BO-FENG
TW158 patents
Patents
50 patentsUS10262870B2Apr 16, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11569250B2Jan 31, 2023
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11515332B2Nov 29, 2022
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11227956B2Jan 18, 2022
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11217494B1Jan 4, 2022
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11289603B2Mar 29, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10854519B2Dec 1, 2020
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10811516B2Oct 20, 2020
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10269940B2Apr 23, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10164050B2Dec 25, 2018
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9991385B2Jun 5, 2018
Enhanced volume control by recess profile control
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9564528B2Feb 7, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11997855B2May 28, 2024
Back-end-of-line selector for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11943933B2Mar 26, 2024
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11862219B2Jan 2, 2024
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11729986B2Aug 15, 2023
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US12069868B2Aug 20, 2024
Gated ferroelectric memory cells for memory cell array and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12058869B2Aug 6, 2024
Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12034045B2Jul 9, 2024
Semiconductor device structure with nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11990529B2May 21, 2024
Air gap in inner spacers and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915787B2Feb 27, 2024
Integrated circuit device and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903189B2Feb 13, 2024
Three-dimensional memory and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901411B2Feb 13, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11856785B2Dec 26, 2023
Memory array and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848370B2Dec 19, 2023
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11791421B2Oct 17, 2023
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11765892B2Sep 19, 2023
Three-dimensional memory device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11758736B2Sep 12, 2023
Ferroelectric random access memory devices and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11588018B2Feb 21, 2023
Semiconductor device structure with nanostructure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11587950B2Feb 21, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11568912B2Jan 31, 2023
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11552103B2Jan 10, 2023
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11508753B2Nov 22, 2022
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502183B2Nov 15, 2022
Air gap in inner spacers and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11469324B2Oct 11, 2022
Semiconductor device with negative capacitance structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450686B2Sep 20, 2022
High density 3D FERAM
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450362B2Sep 20, 2022
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11444069B2Sep 13, 2022
3D semiconductor package including memory array
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417750B2Aug 16, 2022
Gate air spacer for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11404444B2Aug 2, 2022
Three-dimensional memory device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404570B2Aug 2, 2022
Semiconductor devices with embedded ferroelectric field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11362108B2Jun 14, 2022
Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11355551B2Jun 7, 2022
Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11322505B2May 3, 2022
Ferroelectric random access memory devices and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309398B2Apr 19, 2022
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11282945B2Mar 22, 2022
Negative-capacitance field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11233130B2Jan 25, 2022
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11183504B2Nov 23, 2021
Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861968B1Dec 8, 2020
Semiconductor device with negative capacitance structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269651B2Apr 23, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
Showing the top 50 of 158 patents by PatentIndex Score.