Inventor
CHIA HAN-JONG
TW163 patents
⚠️ This page may combine multiple inventors who share the name “CHIA HAN-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
46 patentsUS11423966B2Aug 23, 2022
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US11404091B2Aug 2, 2022
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11776602B2Oct 3, 2023
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11587823B2Feb 21, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11581337B2Feb 14, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11569250B2Jan 31, 2023
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11355516B2Jun 7, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11527553B2Dec 13, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11411011B2Aug 9, 2022
Semiconductor structure having memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11997855B2May 28, 2024
Back-end-of-line selector for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11943933B2Mar 26, 2024
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11729997B2Aug 15, 2023
3D stackable memory and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11647634B2May 9, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11616080B2Mar 28, 2023
Three-dimensional memory device with ferroelectric material
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12069868B2Aug 20, 2024
Gated ferroelectric memory cells for memory cell array and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12058869B2Aug 6, 2024
Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12057471B2Aug 6, 2024
Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12002534B2Jun 4, 2024
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11980036B2May 7, 2024
Semiconductor structure having memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11963363B2Apr 16, 2024
Memory device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11956968B2Apr 9, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915787B2Feb 27, 2024
Integrated circuit device and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910616B2Feb 20, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903189B2Feb 13, 2024
Three-dimensional memory and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903216B2Feb 13, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11869971B2Jan 9, 2024
Multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11864393B2Jan 2, 2024
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856785B2Dec 26, 2023
Memory array and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848381B2Dec 19, 2023
Methods of operating multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11830550B2Nov 28, 2023
Memory with FRAM and SRAM of IC
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11805652B2Oct 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11744080B2Aug 29, 2023
Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11672126B2Jun 6, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11647636B2May 9, 2023
Memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11600520B2Mar 7, 2023
Air gaps in memory array structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11581368B2Feb 14, 2023
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11574929B2Feb 7, 2023
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569264B2Jan 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11552103B2Jan 10, 2023
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532640B2Dec 20, 2022
Method for manufacturing a three-dimensional memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532746B2Dec 20, 2022
Multi-bit memory storage device and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11508753B2Nov 22, 2022
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450362B2Sep 20, 2022
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11444069B2Sep 13, 2022
3D semiconductor package including memory array
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404444B2Aug 2, 2022
Three-dimensional memory device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
EVERSPIN TECHNOLOGIES INC
4 patentsUS10622547B2Apr 14, 2020
Magnetic memory using spin-orbit torque
EVERSPIN TECHNOLOGIES INC9 citations84
US10483320B2Nov 19, 2019
Magnetoresistive stack with seed region and method of manufacturing the same
EVERSPIN TECHNOLOGIES INC6 citations84
US10141498B2Nov 27, 2018
Magnetoresistive stack, seed region thereof and method of manufacturing same
EVERSPIN TECHNOLOGIES INC7 citations84
US11944015B2Mar 26, 2024
Magnetic memory using spin-orbit torque
EVERSPIN TECHNOLOGIES INC2 citations73
Showing the top 50 of 163 patents by PatentIndex Score.