Inventor

USHIDA YASUHISA

JP11 patents

⚠️ This page may combine multiple inventors who share the name “USHIDA YASUHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYODA GOSEI KK

5 patents

US7524741B2Apr 28, 2009

Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device

TOYODA GOSEI KK6 citations61

US8928001B2Jan 6, 2015

Group III nitride compound semiconductor light emitting element and method for producing the same

TOYODA GOSEI KK0 citations51

US7948061B2May 24, 2011

Group III nitride-based compound semiconductor device

TOYODA GOSEI KK0 citations51

US9318559B2Apr 19, 2016

Method for producing group III nitride semiconductor and template substrate

TOYODA GOSEI KK0 citations50

US9196687B2Nov 24, 2015

Method for producing group III nitride semiconductor and template substrate

TOYODA GOSEI KK0 citations50

NAKADA NAOYUKI

2 patents

US8680581B2Mar 25, 2014

Method for producing group III nitride semiconductor and template substrate

NAKADA NAOYUKI3 citations58

US8945965B2Feb 3, 2015

Method for producing a group III nitride semiconductor light-emitting device

NAKADA NAOYUKI1 citations46

KAMIYA MASAO

1 patent

US8546836B2Oct 1, 2013

Light-emitting element

KAMIYA MASAO76 citations95

OKUNO KOJI

1 patent

US8518806B2Aug 27, 2013

Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device

OKUNO KOJI15 citations81

BOYAMA SHINYA

1 patent

US8980657B2Mar 17, 2015

Method for producing a group III nitride semiconductor light-emitting device

BOYAMA SHINYA2 citations53

SAITO YOSHIKI

1 patent

US8598599B2Dec 3, 2013

Group III nitride semiconductor light-emitting device

SAITO YOSHIKI0 citations45