Inventor
Hohn Geoffrey
US12 patents
Patents
12 patentsUS9828672B2Nov 28, 2017
Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
LAM RES CORP25 citations93
US10760158B2Sep 1, 2020
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP14 citations92
US11608559B2Mar 21, 2023
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
LAM RES CORP6 citations83
US11365479B2Jun 21, 2022
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP8 citations83
US10604841B2Mar 31, 2020
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
LAM RES CORP7 citations82
US11920239B2Mar 5, 2024
Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
LAM RES CORP3 citations74
US12227837B2Feb 18, 2025
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP2 citations72
US12000047B2Jun 4, 2024
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
LAM RES CORP1 citations71
US11101164B2Aug 24, 2021
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
LAM RES CORP3 citations71
US12331402B2Jun 17, 2025
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
LAM RES CORP0 citations61
US11702748B2Jul 18, 2023
Wafer level uniformity control in remote plasma film deposition
LAM RES CORP1 citations61
US12163219B2Dec 10, 2024
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP0 citations60