Inventor

MATEESCU ROBERT EUGENIU

US21 patents

⚠️ This page may combine multiple inventors who share the name “MATEESCU ROBERT EUGENIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATEESCU ROBERT EUGENIU

HGST Netherlands BV

Encoding and decoding data to accommodate memory cells having stuck-at faults

Error location pointers for non volatile memory

Techniques for storing bits in memory cells having stuck-at faults

Techniques for storing data in stuck and unstable memory cells

Techniques for encoding and decoding using a combinatorial number system

Distributed data storage with reduced storage overhead using reduced-dependency erasure codes

Techniques for storing data in stuck memory cells

Implementing enhanced performance with read before write to phase change memory to avoid write cancellations

Encoding and decoding redundant bits to accommodate memory cells having stuck-at faults

WESTERN DIGITAL TECH INC

System and methodology for low latency error management within a shared non-volatile memory architecture

Implementing enhanced performance with read before write to phase change memory

Data recovery and regeneration using parity code

Update efficient consensus protocols for erasure coded data stores

Cell-level realization of burn after reading for NAND flash

Data mapping enabling fast read multi-level 3D NAND to improve lifetime capacity

Joint decoding of rewriting NVM error sectors

BANDIC ZVONIMIR Z

Shingled magnetic recording disk drive with minimization of the effect of far track erasure on adjacent data bands

Implementing enhanced data partial-erase for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding

Shingled magnetic recording disk drive with inter-band disk cache and minimization of the effect of far track erasure on adjacent data bands

Implementing enhanced data write for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding

Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding