Inventor
BENISTANT FRANCIS
SG24 patents
⚠️ This page may combine multiple inventors who share the name “BENISTANT FRANCIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
6 patentsUS6969646B2Nov 29, 2005
Method of activating polysilicon gate structure dopants after offset spacer deposition
CHARTERED SEMICONDUCTOR MFG5 citations63
US7253483B2Aug 7, 2007
Semiconductor device layout and channeling implant process
CHARTERED SEMICONDUCTOR MFG2 citations62
US6972236B2Dec 6, 2005
Semiconductor device layout and channeling implant process
CHARTERED SEMICONDUCTOR MFG2 citations62
US7573099B2Aug 11, 2009
Semiconductor device layout and channeling implant process
CHARTERED SEMICONDUCTOR MFG0 citations52
US7259072B2Aug 21, 2007
Shallow low energy ion implantation into pad oxide for improving threshold voltage stability
CHARTERED SEMICONDUCTOR MFG1 citations47
US7202133B2Apr 10, 2007
Structure and method to form source and drain regions over doped depletion regions
CHARTERED SEMICONDUCTOR MFG1 citations46
GLOBALFOUNDRIES SG PTE LTD
5 patentsUS9673084B2Jun 6, 2017
Isolation scheme for high voltage device
GLOBALFOUNDRIES SG PTE LTD13 citations83
US9997225B2Jun 12, 2018
System and method for modular simulation of spin transfer torque magnetic random access memory devices
GLOBALFOUNDRIES SG PTE LTD2 citations69
US8354321B2Jan 15, 2013
Method for fabricating semiconductor devices with reduced junction diffusion
GLOBALFOUNDRIES SG PTE LTD4 citations62
US8860142B2Oct 14, 2014
Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction
GLOBALFOUNDRIES SG PTE LTD2 citations60
US7888752B2Feb 15, 2011
Structure and method to form source and drain regions over doped depletion regions
GLOBALFOUNDRIES SG PTE LTD0 citations46
GLOBALFOUNDRIES INC
5 patentsUS9966433B2May 8, 2018
Multiple-step epitaxial growth S/D regions for NMOS FinFET
GLOBALFOUNDRIES INC2 citations73
US9406752B2Aug 2, 2016
FinFET conformal junction and high EPI surface dopant concentration method and device
GLOBALFOUNDRIES INC3 citations72
US9577040B2Feb 21, 2017
FinFET conformal junction and high epi surface dopant concentration method and device
GLOBALFOUNDRIES INC1 citations51
US9559176B2Jan 31, 2017
FinFET conformal junction and abrupt junction with reduced damage method and device
GLOBALFOUNDRIES INC0 citations51
US9397162B1Jul 19, 2016
FinFET conformal junction and abrupt junction with reduced damage method and device
GLOBALFOUNDRIES INC0 citations51
MICRON TECHNOLOGY INC
3 patentsUS6756268B2Jun 29, 2004
Modified source/drain re-oxidation method and system
MICRON TECHNOLOGY INC8 citations72
US7271435B2Sep 18, 2007
Modified source/drain re-oxidation method and system
MICRON TECHNOLOGY INC0 citations50
US7037860B2May 2, 2006
Modified source/drain re-oxidation method and system
MICRON TECHNOLOGY INC0 citations50