Inventor
BENINGER-BINA MARKUS
DE18 patents
⚠️ This page may combine multiple inventors who share the name “BENINGER-BINA MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
8 patentsUS11610976B2Mar 21, 2023
Semiconductor device including a transistor with one or more barrier regions
INFINEON TECHNOLOGIES AUSTRIA AG2 citations70
US11843045B2Dec 12, 2023
Power semiconductor device having overvoltage protection and method of manufacturing the same
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10790384B2Sep 29, 2020
Power semiconductor device having overvoltage protection
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US12211945B2Jan 28, 2025
Power diode and method of manufacturing a power diode
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US11695083B2Jul 4, 2023
Power diode and method of manufacturing a power diode
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US12283621B2Apr 22, 2025
Semiconductor device having a transistor with trenches and mesas
INFINEON TECHNOLOGIES AUSTRIA AG0 citations59
US11501979B1Nov 15, 2022
Semiconductor device and method of producing a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US11114528B2Sep 7, 2021
Power transistor with dV/dt controllability and tapered mesas
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
INFINEON TECHNOLOGIES AG
5 patentsUS10854739B2Dec 1, 2020
Method for producing IGBT with dV/dt controllability
INFINEON TECHNOLOGIES AG2 citations73
US12034066B2Jul 9, 2024
Power semiconductor device having a barrier region
INFINEON TECHNOLOGIES AG0 citations62
US11610986B2Mar 21, 2023
Power semiconductor switch having a cross-trench structure
INFINEON TECHNOLOGIES AG0 citations62
US11581428B2Feb 14, 2023
IGBT with dV/dt controllability
INFINEON TECHNOLOGIES AG1 citations62
US11594621B2Feb 28, 2023
Method of processing a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations61
INFINEON TECH DRESDEN GMBH & CO KG
5 patentsUS11949006B2Apr 2, 2024
Power semiconductor device with p-contact and doped insulation blocks defining contact holes
INFINEON TECH DRESDEN GMBH & CO KG0 citations62
US11018051B2May 25, 2021
Power semiconductor device with reliably verifiable p-contact and method
INFINEON TECH DRESDEN GMBH & CO KG0 citations62
US11888061B2Jan 30, 2024
Power semiconductor device having elevated source regions and recessed body regions
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11257946B2Feb 22, 2022
Method of forming a power semiconductor device
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11011629B2May 18, 2021
Power semiconductor switch with improved controllability
INFINEON TECH DRESDEN GMBH & CO KG0 citations51