Inventor

JOHN TOM J

US18 patents

⚠️ This page may combine multiple inventors who share the name “JOHN TOM J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JOHN TOM J

MICRON TECHNOLOGY INC

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Electronic devices comprising memory pillars and dummy pillars including an oxide material, and related systems and methods

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Electronic devices comprising memory pillars and dummy pillars including an oxide material, and related systems and methods

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Electronic devices including pillars in array regions and non-array regions

Electronic devices including pillars in array regions and non-array regions

Electronic devices including pillars in array regions and non-array regions, and related systems and methods

Microelectronic devices including a selectively removable cap dielectric material, methods of forming the microelectronic devices, and related systems

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devices

Methods of forming an array of elevationally-extending strings of memory cells individually comprising a programmable charge-storage transistor

LODESTAR LICENSING GROUP LLC

Memory arrays and methods used in forming a memory array comprising strings of memory cells