Inventor
LEVY SAGY CHAREL
IL29 patents
⚠️ This page may combine multiple inventors who share the name “LEVY SAGY CHAREL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
14 patentsUS9093318B2Jul 28, 2015
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP22 citations96
US9929240B2Mar 27, 2018
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP11 citations92
US9502543B1Nov 22, 2016
Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP15 citations92
US9355849B1May 31, 2016
Oxide-nitride-oxide stack having multiple oxynitride layers
CYPRESS SEMICONDUCTOR CORP19 citations92
US9349824B2May 24, 2016
Oxide-nitride-oxide stack having multiple oxynitride layers
CYPRESS SEMICONDUCTOR CORP18 citations92
US9306025B2Apr 5, 2016
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP17 citations92
US10304968B2May 28, 2019
Radical oxidation process for fabricating a nonvolatile charge trap memory device
CYPRESS SEMICONDUCTOR CORP8 citations84
US7384833B2Jun 10, 2008
Stress liner for integrated circuits
CYPRESS SEMICONDUCTOR CORP10 citations84
US9553175B2Jan 24, 2017
SONOS type stacks for nonvolatile charge trap memory devices and methods to form the same
CYPRESS SEMICONDUCTOR CORP1 citations63
US9105740B2Aug 11, 2015
SONOS type stacks for nonvolatile changetrap memory devices and methods to form the same
CYPRESS SEMICONDUCTOR CORP1 citations63
US10312336B2Jun 4, 2019
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP0 citations52
US10079314B2Sep 18, 2018
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
CYPRESS SEMICONDUCTOR CORP0 citations52
US9997641B2Jun 12, 2018
SONOS ONO stack scaling
CYPRESS SEMICONDUCTOR CORP0 citations52
US9349877B1May 24, 2016
Nitridation oxidation of tunneling layer for improved SONOS speed and retention
CYPRESS SEMICONDUCTOR CORP0 citations52
Longitude Flash Memory Solutions Ltd
14 patentsUS10593812B2Mar 17, 2020
Radical oxidation process for fabricating a nonvolatile charge trap memory device
Longitude Flash Memory Solutions Ltd7 citations84
US11222965B2Jan 11, 2022
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US10903068B2Jan 26, 2021
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US10699901B2Jun 30, 2020
SONOS ONO stack scaling
Longitude Flash Memory Solutions Ltd1 citations73
US10615289B2Apr 7, 2020
Nonvolatile charge trap memory device having a high dielectric constant blocking region
Longitude Flash Memory Solutions Ltd1 citations73
US12464780B2Nov 4, 2025
Nonvolatile charge trap memory device having a high dielectric constant blocking region
Longitude Flash Memory Solutions Ltd0 citations62
US12266521B2Apr 1, 2025
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd0 citations62
US12009401B2Jun 11, 2024
Memory transistor with multiple charge storing layers and a high work function gate electrode
Longitude Flash Memory Solutions Ltd0 citations62
US11784243B2Oct 10, 2023
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd0 citations62
US11721733B2Aug 8, 2023
Memory transistor with multiple charge storing layers and a high work function gate electrode
Longitude Flash Memory Solutions Ltd0 citations62
US11456365B2Sep 27, 2022
Memory transistor with multiple charge storing layers and a high work function gate electrode
Longitude Flash Memory Solutions Ltd0 citations62
US11056565B2Jul 6, 2021
Flash memory device and method
Longitude Flash Memory Solutions Ltd0 citations62
US10903325B2Jan 26, 2021
Memory transistor with multiple charge storing layers and a high work function gate electrode
Longitude Flash Memory Solutions Ltd0 citations56
US10446656B2Oct 15, 2019
Memory transistor with multiple charge storing layers and a high work function gate electrode
Longitude Flash Memory Solutions Ltd0 citations52