Inventor
TAI ROGER
TW8 patents
Patents
8 patentsUS10483396B1Nov 19, 2019
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US10038095B2Jul 31, 2018
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11121255B2Sep 14, 2021
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735668B2Aug 22, 2023
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11482620B2Oct 25, 2022
Interfacial layer between Fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10944005B2Mar 9, 2021
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10763366B2Sep 1, 2020
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651309B2May 12, 2020
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51