Inventor
JUNG KYOOHO
KR26 patents
Patents
26 patentsUS11227912B2Jan 18, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11641730B2May 2, 2023
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11239239B2Feb 1, 2022
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11133314B2Sep 28, 2021
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US10854709B2Dec 1, 2020
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US11081338B2Aug 3, 2021
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations70
US12513919B2Dec 30, 2025
Method of manufacturing metal nitride film and electronic device including metal nitride film
SAMSUNG ELECTRONICS CO LTD0 citations62
US12349373B2Jul 1, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12082395B2Sep 3, 2024
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11810946B2Nov 7, 2023
Integrated circuit device including capacitor with metal nitrate interfacial layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11798980B2Oct 24, 2023
Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen
SAMSUNG ELECTRONICS CO LTD0 citations62
US11778805B2Oct 3, 2023
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11476253B2Oct 18, 2022
Semiconductor memory device including a multi-layer electrode
SAMSUNG ELECTRONICS CO LTD0 citations62
US11424317B2Aug 23, 2022
Method of manufacturing metal nitride film and electronic device including metal nitride film
SAMSUNG ELECTRONICS CO LTD0 citations62
US12324145B2Jun 3, 2025
Semiconductor device with capping conductive layer on an electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11665884B2May 30, 2023
Semiconductor device with capping conductive layer on an electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11658024B2May 23, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11728160B2Aug 15, 2023
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11600621B2Mar 7, 2023
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12063772B2Aug 13, 2024
Semiconductor device including capacitor with pillar-shaped bottom electrode
SAMSUNG ELECTRONICS CO LTD0 citations59
US11716840B2Aug 1, 2023
Semiconductor memory device including capacitor
SAMSUNG ELECTRONICS CO LTD0 citations59
US12557267B2Feb 17, 2026
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US12526982B2Jan 13, 2026
Capacitor and a dram device including the same
SAMSUNG ELECTRONICS CO LTD0 citations55
US12080710B2Sep 3, 2024
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations55
US11910592B2Feb 20, 2024
Capacitor and a DRAM device including the same
SAMSUNG ELECTRONICS CO LTD0 citations55
US10867784B2Dec 15, 2020
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50