Inventor
FERRANTE YARI
US13 patents
⚠️ This page may combine multiple inventors who share the name “FERRANTE YARI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS11005029B2May 11, 2021
Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropy
SAMSUNG ELECTRONICS CO LTD5 citations72
US10937953B2Mar 2, 2021
Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR
SAMSUNG ELECTRONICS CO LTD3 citations72
US10651234B2May 12, 2020
Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque
SAMSUNG ELECTRONICS CO LTD2 citations72
US11804321B2Oct 31, 2023
Tunable templating layers for perpendicularly magnetized Heusler films
SAMSUNG ELECTRONICS CO LTD2 citations71
US11665979B2May 30, 2023
Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds
SAMSUNG ELECTRONICS CO LTD2 citations71
US11925124B2Mar 5, 2024
Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
SAMSUNG ELECTRONICS CO LTD0 citations61
US11751486B2Sep 5, 2023
Templating layers for perpendicularly magnetized Heusler films/compounds
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538987B2Dec 27, 2022
IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds
SAMSUNG ELECTRONICS CO LTD0 citations61
US11756578B2Sep 12, 2023
Ferrimagnetic Heusler compounds with high spin polarization
SAMSUNG ELECTRONICS CO LTD0 citations59
IBM
4 patentsUS10957848B2Mar 23, 2021
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM3 citations71
US11557721B2Jan 17, 2023
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM0 citations61
US12317508B2May 27, 2025
Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devices
IBM0 citations60
US12136447B2Nov 5, 2024
Tetragonal half metallic half-Heusler compounds
IBM0 citations59