Inventor

GARG CHIRAG

US13 patents

⚠️ This page may combine multiple inventors who share the name “GARG CHIRAG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

7 patents

US10957848B2Mar 23, 2021

Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)

IBM3 citations71

US11557721B2Jan 17, 2023

Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)

IBM0 citations61

US12317508B2May 27, 2025

Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devices

IBM0 citations60

US12274179B2Apr 8, 2025

Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films

IBM0 citations60

US10916282B2Feb 9, 2021

Control of switching trajectory in spin orbit torque devices by micromagnetic configuration

IBM1 citations60

US12136447B2Nov 5, 2024

Tetragonal half metallic half-Heusler compounds

IBM0 citations59

US12581868B2Mar 17, 2026

Half metallic Heusler multilayers with perpendicular magnetic anisotropy

IBM0 citations58

SAMSUNG ELECTRONICS CO LTD

6 patents

US11804321B2Oct 31, 2023

Tunable templating layers for perpendicularly magnetized Heusler films

SAMSUNG ELECTRONICS CO LTD2 citations71

US11665979B2May 30, 2023

Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds

SAMSUNG ELECTRONICS CO LTD2 citations71

US11925124B2Mar 5, 2024

Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping

SAMSUNG ELECTRONICS CO LTD0 citations61

US11751486B2Sep 5, 2023

Templating layers for perpendicularly magnetized Heusler films/compounds

SAMSUNG ELECTRONICS CO LTD0 citations61

US11538987B2Dec 27, 2022

IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds

SAMSUNG ELECTRONICS CO LTD0 citations61

US12094508B1Sep 17, 2024

Magnetic tunneling junction switching with parallel spin-momentum locked spin current

SAMSUNG ELECTRONICS CO LTD0 citations58