Inventor
SAMANT MAHESH
US12 patents
⚠️ This page may combine multiple inventors who share the name “SAMANT MAHESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
5 patentsUS7149105B2Dec 12, 2006
Magnetic tunnel junctions for MRAM devices
IBM47 citations92
US12317508B2May 27, 2025
Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devices
IBM0 citations60
US12274179B2Apr 8, 2025
Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films
IBM0 citations60
US12136447B2Nov 5, 2024
Tetragonal half metallic half-Heusler compounds
IBM0 citations59
US12581868B2Mar 17, 2026
Half metallic Heusler multilayers with perpendicular magnetic anisotropy
IBM0 citations58
SAMSUNG ELECTRONICS CO LTD
5 patentsUS11804321B2Oct 31, 2023
Tunable templating layers for perpendicularly magnetized Heusler films
SAMSUNG ELECTRONICS CO LTD2 citations71
US11925124B2Mar 5, 2024
Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
SAMSUNG ELECTRONICS CO LTD0 citations61
US11751486B2Sep 5, 2023
Templating layers for perpendicularly magnetized Heusler films/compounds
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538987B2Dec 27, 2022
IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds
SAMSUNG ELECTRONICS CO LTD0 citations61
US11756578B2Sep 12, 2023
Ferrimagnetic Heusler compounds with high spin polarization
SAMSUNG ELECTRONICS CO LTD0 citations59