P

Inventor

KOTA ANIL CHOWDARY

US20 patents

Patents

20 patents
US11114176B1Sep 7, 2021

Systems and methods to provide write termination for one time programmable memory cells

QUALCOMM INC7 citations83
US11250895B1Feb 15, 2022

Systems and methods for driving wordlines using set-reset latches

QUALCOMM INC6 citations73
US11164610B1Nov 2, 2021

Memory device with built-in flexible double redundancy

QUALCOMM INC4 citations72
US11152038B2Oct 19, 2021

Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit

QUALCOMM INC3 citations72
US10796735B1Oct 6, 2020

Read tracking scheme for a memory device

QUALCOMM INC4 citations72
US11568904B1Jan 31, 2023

Memory with positively boosted write multiplexer

QUALCOMM INC2 citations71
US11250924B1Feb 15, 2022

One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods

QUALCOMM INC2 citations70
US11177010B1Nov 16, 2021

Bitcell for data redundancy

QUALCOMM INC3 citations70
US10853542B1Dec 1, 2020

Fuse-based logic repair

QUALCOMM INC4 citations68
US11763866B1Sep 19, 2023

SRAM with scan mode

QUALCOMM INC0 citations62
US11670351B1Jun 6, 2023

Memory with single-ended sensing using reset-set latch

QUALCOMM INC0 citations62
US11640835B2May 2, 2023

Memory device with built-in flexible double redundancy

QUALCOMM INC0 citations62
US12451171B2Oct 21, 2025

High-speed and area-efficient parallel-write-and-read memory

QUALCOMM INC0 citations61
US12094528B2Sep 17, 2024

Memory with double redundancy

QUALCOMM INC0 citations61
US8830779B1Sep 9, 2014

Low voltage fuse-based memory with high voltage sense amplifier

QUALCOMM INC3 citations61
US8787096B1Jul 22, 2014

N-well switching circuit

QUALCOMM INC2 citations61
US12125526B2Oct 22, 2024

Memory with bitcell power boosting

QUALCOMM INC0 citations60
US11854609B2Dec 26, 2023

Memory with reduced capacitance at a sense amplifier

QUALCOMM INC0 citations51
US11894050B2Feb 6, 2024

Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth

QUALCOMM INC0 citations50
US9252765B2Feb 2, 2016

N-well switching circuit

QUALCOMM INC1 citations50