Inventor
GAO QUN
CN17 patents
⚠️ This page may combine multiple inventors who share the name “GAO QUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
10 patentsUS10269932B1Apr 23, 2019
Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices
GLOBALFOUNDRIES INC42 citations91
US10832965B2Nov 10, 2020
Fin reveal forming STI regions having convex shape between fins
GLOBALFOUNDRIES INC1 citations60
US10886178B2Jan 5, 2021
Device with highly active acceptor doping and method of production thereof
GLOBALFOUNDRIES INC0 citations58
US10593555B2Mar 17, 2020
Composite sacrificial gate with etch selective layer
GLOBALFOUNDRIES INC1 citations58
US10453754B1Oct 22, 2019
Diffused contact extension dopants in a transistor device
GLOBALFOUNDRIES INC0 citations52
US10636894B2Apr 28, 2020
Fin-type transistors with spacers on the gates
GLOBALFOUNDRIES INC0 citations51
US10256152B2Apr 9, 2019
Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge
GLOBALFOUNDRIES INC0 citations49
US10014364B1Jul 3, 2018
On-chip resistors with a tunable temperature coefficient of resistance
GLOBALFOUNDRIES INC0 citations43
US10727133B2Jul 28, 2020
Method of forming gate structure with undercut region and resulting device
GLOBALFOUNDRIES INC0 citations41
US10529831B1Jan 7, 2020
Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging
GLOBALFOUNDRIES INC0 citations41