Inventor
HAN JEEHOON
KR60 patents
Patents
50 patentsUS10211154B2Feb 19, 2019
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations83
US11968836B2Apr 23, 2024
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11792994B2Oct 17, 2023
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
SAMSUNG ELECTRONICS CO LTD4 citations73
US11404429B2Aug 2, 2022
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US11049847B2Jun 29, 2021
Semiconductor device for preventing defects between bit lines and channels
SAMSUNG ELECTRONICS CO LTD2 citations73
US11444098B2Sep 13, 2022
Vertical non-volatile memory devices and methods of programming the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11374017B2Jun 28, 2022
Three-dimensional memory device including a string selection line gate electrode having a silicide layer
SAMSUNG ELECTRONICS CO LTD2 citations72
US11107765B2Aug 31, 2021
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10396088B2Aug 27, 2019
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US12120882B2Oct 15, 2024
Semiconductor device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11594544B2Feb 28, 2023
Semiconductor devices with string select channel for improved upper connection
SAMSUNG ELECTRONICS CO LTD5 citations71
US11552098B2Jan 10, 2023
Semiconductor device including data storage pattern with improved retention characteristics
SAMSUNG ELECTRONICS CO LTD2 citations71
US11404434B2Aug 2, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations71
US11114461B2Sep 7, 2021
Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer
SAMSUNG ELECTRONICS CO LTD2 citations71
US11563023B2Jan 24, 2023
Semiconductor device with reduced vertical height
SAMSUNG ELECTRONICS CO LTD2 citations70
US12219768B2Feb 4, 2025
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12183677B2Dec 31, 2024
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11974438B2Apr 30, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11925020B2Mar 5, 2024
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11854975B2Dec 26, 2023
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11729972B2Aug 15, 2023
3D memory devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US11450681B2Sep 20, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11121151B2Sep 14, 2021
Vertical semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12439602B2Oct 7, 2025
Semiconductor device including data storage pattern with improved retention characteristics
SAMSUNG ELECTRONICS CO LTD0 citations61
US12408346B2Sep 2, 2025
Semiconductor device and electronic system
SAMSUNG ELECTRONICS CO LTD0 citations61
US12279421B2Apr 15, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12058866B2Aug 6, 2024
Semiconductor device and electronic system
SAMSUNG ELECTRONICS CO LTD0 citations61
US12022658B2Jun 25, 2024
Three-dimensional (3D) semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11778834B2Oct 3, 2023
Three-dimensional (3D) semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11616070B2Mar 28, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11552099B2Jan 10, 2023
Vertical-type nonvolatile memory device including an extension area contact structure
SAMSUNG ELECTRONICS CO LTD1 citations61
US11521981B2Dec 6, 2022
Three-dimensional (3D) semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US9171853B2Oct 27, 2015
Method of fabricating semiconductor device and device fabricated thereby
SAMSUNG ELECTRONICS CO LTD2 citations61
US11616078B2Mar 28, 2023
Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer
SAMSUNG ELECTRONICS CO LTD0 citations60
US12363904B2Jul 15, 2025
Three-dimensional semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12268004B2Apr 1, 2025
Semiconductor devices with string select channel layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US11411078B2Aug 9, 2022
Semiconductor devices including dummy patterns for discharging effects
SAMSUNG ELECTRONICS CO LTD1 citations59
US12369324B2Jul 22, 2025
Three-dimensional semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US12131995B2Oct 29, 2024
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US11791262B2Oct 17, 2023
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US12096637B2Sep 17, 2024
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12402307B2Aug 26, 2025
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12302580B2May 13, 2025
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12302570B2May 13, 2025
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12278165B2Apr 15, 2025
Semiconductor storage devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12185548B2Dec 31, 2024
Semiconductor device having dummy structures in a peripheral region and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12114504B2Oct 8, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations50
US11515322B2Nov 29, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US9553098B2Jan 24, 2017
Semiconductor devices including separate line patterns
SAMSUNG ELECTRONICS CO LTD0 citations50
US12490428B2Dec 2, 2025
Semiconductor device including vertical memory structure and separation structure each including side surface slope changing portion and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations49
Showing the top 50 of 60 patents by PatentIndex Score.