Inventor

LIN YAN-TING

TW23 patents

⚠️ This page may combine multiple inventors who share the name “LIN YAN-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN YAN-TING

TAIWAN SEMICONDUCTOR MFG CO LTD

Mechanism for FinFET well doping

Mechanism for FinFET well doping

Interfacial layer between fin and source/drain region

Transistor source/drain regions and methods of forming the same

Methods of forming semiconductor devices having plural epitaxial layers

Mechanism for FinFET well doping

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

Semiconductor device and manufacturing method thereof

Supportive layer in source/drains of FinFET devices

Mechanism for FinFET well doping

Supportive layer in source/drains of FinFET devices

Interfacial layer between fin and source/drain region

Interfacial layer between Fin and source/drain region

Interfacial layer between fin and source/drain region

Mechanism for finFET well doping

Epitaxially grown stacked contact structure of semiconductor device

Supportive layer in source/drains of FinFET devices

Nanosheet semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG

Contact structure of semiconductor device

Methods and systems for dopant activation using microwave radiation

INER AEC EXECUTIVE YUAN

Universal jig for clamping wind turbine blades

INSTITUTE OF NUCLEAR ENNERGY RES ATOMIC ENERGY COUNCIL EXECUTIVE YUAN R O C

Noise-reduction device for wind turbine and the wind turbine applied thereof

LIN YAN-TING

Cooling device for Stirling circulated dry storage container