Inventor

LEE YEN-RU

TW54 patents

⚠️ This page may combine multiple inventors who share the name “LEE YEN-RU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

47 patents

US9831116B2Nov 28, 2017

FETS and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD23 citations93

US9905641B2Feb 27, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US11004724B2May 11, 2021

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83

US10483396B1Nov 19, 2019

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83

US10103249B2Oct 16, 2018

FinFET device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83

US10038095B2Jul 31, 2018

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83

US11133416B2Sep 28, 2021

Methods of forming semiconductor devices having plural epitaxial layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11075120B2Jul 27, 2021

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10879355B2Dec 29, 2020

Profile design for improved device performance

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73

US10468482B2Nov 5, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11948999B2Apr 2, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11728208B2Aug 15, 2023

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11677027B2Jun 13, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11063152B2Jul 13, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72

US12191393B2Jan 7, 2025

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12471311B2Nov 11, 2025

Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12419076B2Sep 16, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12218240B2Feb 4, 2025

Source/drain regions of FinFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12112986B2Oct 8, 2024

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12034061B2Jul 9, 2024

Method for forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12002854B2Jun 4, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11929401B2Mar 12, 2024

Method of forming a source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11855142B2Dec 26, 2023

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11735664B2Aug 22, 2023

Source/drain regions of FINFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11476331B2Oct 18, 2022

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11430878B2Aug 30, 2022

Method for fabricating semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11271096B2Mar 8, 2022

Method for forming fin field effect transistor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11257951B2Feb 22, 2022

Method of making semiconductor device having first and second epitaxial materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11217672B2Jan 4, 2022

Method of forming a source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11171209B2Nov 9, 2021

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11121255B2Sep 14, 2021

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11107923B2Aug 31, 2021

Source/drain regions of FinFET devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US10991795B2Apr 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12336210B2Jun 17, 2025

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11735668B2Aug 22, 2023

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11575026B2Feb 7, 2023

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11482620B2Oct 25, 2022

Interfacial layer between Fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US10944005B2Mar 9, 2021

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US10854748B2Dec 1, 2020

Semiconductor device having first and second epitaxial materials

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US9842930B2Dec 12, 2017

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US9728641B2Aug 8, 2017

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US9412868B2Aug 9, 2016

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US9401426B2Jul 26, 2016

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US12094761B2Sep 17, 2024

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US11264237B2Mar 1, 2022

Method of epitaxy and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US10854715B2Dec 1, 2020

Supportive layer in source/drains of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US10763366B2Sep 1, 2020

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

SU LILLY

1 patent

US8927374B2Jan 6, 2015

Semiconductor device and fabrication method thereof

SU LILLY10 citations80

LEE YEN-RU

1 patent

US8835267B2Sep 16, 2014

Semiconductor device and fabrication method thereof

LEE YEN-RU9 citations80

CHUANG HARRY-HAK-LAY

1 patent

US8889501B2Nov 18, 2014

Methods for forming MOS devices with raised source/drain regions

CHUANG HARRY-HAK-LAY6 citations72

Showing the top 50 of 54 patents by PatentIndex Score.