Inventor
LEE CHIEN-WEI
TW37 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHIEN-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS10483396B1Nov 19, 2019
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9806154B2Oct 31, 2017
FinFET structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9620503B1Apr 11, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11432372B2Aug 30, 2022
Warpage control in the packaging of integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11088028B2Aug 10, 2021
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11075120B2Jul 27, 2021
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10512124B2Dec 17, 2019
Warpage control in the packaging of integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11677027B2Jun 13, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11063152B2Jul 13, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12191393B2Jan 7, 2025
Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12419076B2Sep 16, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278146B2Apr 15, 2025
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266655B2Apr 1, 2025
Transistors with recessed silicon cap and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218222B2Feb 4, 2025
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144065B2Nov 12, 2024
Warpage control in the packaging of integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112986B2Oct 8, 2024
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12034061B2Jul 9, 2024
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929401B2Mar 12, 2024
Method of forming a source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929398B2Mar 12, 2024
FinFET structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527442B2Dec 13, 2022
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11450742B2Sep 20, 2022
FinFET structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11355620B2Jun 7, 2022
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11296077B2Apr 5, 2022
Transistors with recessed silicon cap and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11271096B2Mar 8, 2022
Method for forming fin field effect transistor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217672B2Jan 4, 2022
Method of forming a source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336210B2Jun 17, 2025
Source/drain structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735668B2Aug 22, 2023
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11575026B2Feb 7, 2023
Source/drain structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11482620B2Oct 25, 2022
Interfacial layer between Fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10944005B2Mar 9, 2021
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12317552B2May 27, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12278145B2Apr 15, 2025
Semiconductor devices with a source/drain barrier layer and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US11942550B2Mar 26, 2024
Nanosheet semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47