P

Inventor

LEE CHIEN-WEI

TW37 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHIEN-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

33 patents
US10483396B1Nov 19, 2019

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9806154B2Oct 31, 2017

FinFET structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9620503B1Apr 11, 2017

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11432372B2Aug 30, 2022

Warpage control in the packaging of integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11088028B2Aug 10, 2021

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11075120B2Jul 27, 2021

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10512124B2Dec 17, 2019

Warpage control in the packaging of integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11677027B2Jun 13, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11063152B2Jul 13, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12191393B2Jan 7, 2025

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12419076B2Sep 16, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278146B2Apr 15, 2025

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266655B2Apr 1, 2025

Transistors with recessed silicon cap and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218222B2Feb 4, 2025

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144065B2Nov 12, 2024

Warpage control in the packaging of integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112986B2Oct 8, 2024

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12034061B2Jul 9, 2024

Method for forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929401B2Mar 12, 2024

Method of forming a source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929398B2Mar 12, 2024

FinFET structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527442B2Dec 13, 2022

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11450742B2Sep 20, 2022

FinFET structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11355620B2Jun 7, 2022

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11296077B2Apr 5, 2022

Transistors with recessed silicon cap and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11271096B2Mar 8, 2022

Method for forming fin field effect transistor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217672B2Jan 4, 2022

Method of forming a source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336210B2Jun 17, 2025

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735668B2Aug 22, 2023

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11575026B2Feb 7, 2023

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11482620B2Oct 25, 2022

Interfacial layer between Fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10944005B2Mar 9, 2021

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12317552B2May 27, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12278145B2Apr 15, 2025

Semiconductor devices with a source/drain barrier layer and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US11942550B2Mar 26, 2024

Nanosheet semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47

CHENG MING-DA

1 patent

REALTEK SEMICONDUCTOR CORP

1 patent

HUANG HUI-MIN

1 patent

LIN YU-TONG

1 patent