Inventor
TSAI PANG-YEN
TW97 patents
⚠️ This page may combine multiple inventors who share the name “TSAI PANG-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS11393924B2Jul 19, 2022
Structure and formation method of semiconductor device with high contact area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11626494B2Apr 11, 2023
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US12230692B2Feb 18, 2025
Self-aligned inner spacer on gate-all-around structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855215B2Dec 26, 2023
Semiconductor device structure with high contact area
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11605633B2Mar 14, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417764B2Aug 16, 2022
Interface profile control in epitaxial structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10998241B2May 4, 2021
Selective dual silicide formation using a maskless fabrication process flow
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10847413B2Nov 24, 2020
Method of forming contact plugs for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10700066B2Jun 30, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10515849B2Dec 24, 2019
Semiconductor device, interconnection structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10872906B2Dec 22, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12191393B2Jan 7, 2025
Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12272752B2Apr 8, 2025
Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11984450B2May 14, 2024
Semiconductor device having spacer residue
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11610888B2Mar 21, 2023
Semiconductor device having cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11211383B2Dec 28, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12477778B2Nov 18, 2025
Epitaxial structure for source/drain contact for semiconductor structure having fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12446269B2Oct 14, 2025
Strained nanosheets on silicon-on-insulator substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431412B2Sep 30, 2025
Contact plugs for semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369386B2Jul 22, 2025
Epitaxial layers in source/drain contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369341B2Jul 22, 2025
Channel structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148807B2Nov 19, 2024
Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12132082B2Oct 29, 2024
Channel mobility improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080766B2Sep 3, 2024
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
16 patentsUS7538387B2May 26, 2009
Stack SiGe for short channel improvement
TAIWAN SEMICONDUCTOR MFG85 citations98
US7803690B2Sep 28, 2010
Epitaxy silicon on insulator (ESOI)
TAIWAN SEMICONDUCTOR MFG13 citations93
US7528028B2May 5, 2009
Super anneal for process induced strain modulation
TAIWAN SEMICONDUCTOR MFG22 citations93
US7465972B2Dec 16, 2008
High performance CMOS device design
TAIWAN SEMICONDUCTOR MFG21 citations92
US6649077B2Nov 18, 2003
Method and apparatus for removing coating layers from alignment marks on a wafer
TAIWAN SEMICONDUCTOR MFG21 citations92
US9276117B1Mar 1, 2016
Structure and method and FinFET device
TAIWAN SEMICONDUCTOR MFG7 citations84
US8049277B2Nov 1, 2011
Epitaxy silicon on insulator (ESOI)
TAIWAN SEMICONDUCTOR MFG8 citations84
US7816217B2Oct 19, 2010
Multi-step epitaxial process for depositing Si/SiGe
TAIWAN SEMICONDUCTOR MFG17 citations84
US7615426B2Nov 10, 2009
PMOS transistor with discontinuous CESL and method of fabrication
TAIWAN SEMICONDUCTOR MFG11 citations84
US7592619B2Sep 22, 2009
Epitaxy layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG14 citations84
US7175709B2Feb 13, 2007
Epitaxy layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG9 citations74
US9029246B2May 12, 2015
Methods of forming epitaxial structures
TAIWAN SEMICONDUCTOR MFG4 citations73
US8823104B2Sep 2, 2014
Epitaxy silicon on insulator (ESOI)
TAIWAN SEMICONDUCTOR MFG2 citations63
US7732289B2Jun 8, 2010
Method of forming a MOS device with an additional layer
TAIWAN SEMICONDUCTOR MFG2 citations63
US7504292B2Mar 17, 2009
Short channel effect engineering in MOS device using epitaxially carbon-doped silicon
TAIWAN SEMICONDUCTOR MFG3 citations63
US7129184B2Oct 31, 2006
Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch
TAIWAN SEMICONDUCTOR MFG4 citations63
(unassigned)
5 patentsUS6651263B1Nov 25, 2003
Toilet tank having a two-stage flushing device
18 citations82
US6041452AMar 28, 2000
Water-saving toilet
19 citations82
US5483706AJan 16, 1996
Flush device for toilet
10 citations71
US5414877AMay 16, 1995
Flush device for water closet
8 citations71
US5396666AMar 14, 1995
Flush device for toilet
14 citations71
CHEN YUN-HSIU
1 patentLIN CHIN-HSIANG
1 patentVANGUARD INT SEMICONDUCT CORP
1 patentSU LILLY
1 patentLEE YEN-RU
1 patentShowing the top 50 of 97 patents by PatentIndex Score.