P

Inventor

TSAI PANG-YEN

TW97 patents
⚠️ This page may combine multiple inventors who share the name “TSAI PANG-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

24 patents
US11393924B2Jul 19, 2022

Structure and formation method of semiconductor device with high contact area

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11626494B2Apr 11, 2023

Epitaxial backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US12230692B2Feb 18, 2025

Self-aligned inner spacer on gate-all-around structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855215B2Dec 26, 2023

Semiconductor device structure with high contact area

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11605633B2Mar 14, 2023

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417764B2Aug 16, 2022

Interface profile control in epitaxial structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10998241B2May 4, 2021

Selective dual silicide formation using a maskless fabrication process flow

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10847413B2Nov 24, 2020

Method of forming contact plugs for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10700066B2Jun 30, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10515849B2Dec 24, 2019

Semiconductor device, interconnection structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10872906B2Dec 22, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12191393B2Jan 7, 2025

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12272752B2Apr 8, 2025

Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11984450B2May 14, 2024

Semiconductor device having spacer residue

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11610888B2Mar 21, 2023

Semiconductor device having cap layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11211383B2Dec 28, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12477778B2Nov 18, 2025

Epitaxial structure for source/drain contact for semiconductor structure having fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12446269B2Oct 14, 2025

Strained nanosheets on silicon-on-insulator substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431412B2Sep 30, 2025

Contact plugs for semiconductor device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369386B2Jul 22, 2025

Epitaxial layers in source/drain contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369341B2Jul 22, 2025

Channel structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148807B2Nov 19, 2024

Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12132082B2Oct 29, 2024

Channel mobility improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080766B2Sep 3, 2024

Epitaxial backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

16 patents
US7538387B2May 26, 2009

Stack SiGe for short channel improvement

TAIWAN SEMICONDUCTOR MFG85 citations98
US7803690B2Sep 28, 2010

Epitaxy silicon on insulator (ESOI)

TAIWAN SEMICONDUCTOR MFG13 citations93
US7528028B2May 5, 2009

Super anneal for process induced strain modulation

TAIWAN SEMICONDUCTOR MFG22 citations93
US7465972B2Dec 16, 2008

High performance CMOS device design

TAIWAN SEMICONDUCTOR MFG21 citations92
US6649077B2Nov 18, 2003

Method and apparatus for removing coating layers from alignment marks on a wafer

TAIWAN SEMICONDUCTOR MFG21 citations92
US9276117B1Mar 1, 2016

Structure and method and FinFET device

TAIWAN SEMICONDUCTOR MFG7 citations84
US8049277B2Nov 1, 2011

Epitaxy silicon on insulator (ESOI)

TAIWAN SEMICONDUCTOR MFG8 citations84
US7816217B2Oct 19, 2010

Multi-step epitaxial process for depositing Si/SiGe

TAIWAN SEMICONDUCTOR MFG17 citations84
US7615426B2Nov 10, 2009

PMOS transistor with discontinuous CESL and method of fabrication

TAIWAN SEMICONDUCTOR MFG11 citations84
US7592619B2Sep 22, 2009

Epitaxy layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG14 citations84
US7175709B2Feb 13, 2007

Epitaxy layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG9 citations74
US9029246B2May 12, 2015

Methods of forming epitaxial structures

TAIWAN SEMICONDUCTOR MFG4 citations73
US8823104B2Sep 2, 2014

Epitaxy silicon on insulator (ESOI)

TAIWAN SEMICONDUCTOR MFG2 citations63
US7732289B2Jun 8, 2010

Method of forming a MOS device with an additional layer

TAIWAN SEMICONDUCTOR MFG2 citations63
US7504292B2Mar 17, 2009

Short channel effect engineering in MOS device using epitaxially carbon-doped silicon

TAIWAN SEMICONDUCTOR MFG3 citations63
US7129184B2Oct 31, 2006

Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch

TAIWAN SEMICONDUCTOR MFG4 citations63

(unassigned)

5 patents

CHEN YUN-HSIU

1 patent

LIN CHIN-HSIANG

1 patent

VANGUARD INT SEMICONDUCT CORP

1 patent

SU LILLY

1 patent

LEE YEN-RU

1 patent

Showing the top 50 of 97 patents by PatentIndex Score.