Inventor
TAKEUCHI YUJI
JP95 patents
⚠️ This page may combine multiple inventors who share the name “TAKEUCHI YUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
49 patentsUS6870773B2Mar 22, 2005
Data writing method for semiconductor memory device and semiconductor memory device
TOSHIBA KK112 citations99
US6845042B2Jan 18, 2005
Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems
TOSHIBA KK149 citations99
US6555427B1Apr 29, 2003
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK138 citations99
US6353242B1Mar 5, 2002
Nonvolatile semiconductor memory
TOSHIBA KK127 citations99
US5889304AMar 30, 1999
Nonvolatile semiconductor memory device
TOSHIBA KK165 citations99
US7498630B2Mar 3, 2009
Nonvolatile semiconductor memory
TOSHIBA KK52 citations98
US7245534B2Jul 17, 2007
Nonvolatile semiconductor memory
TOSHIBA KK63 citations98
US6958938B2Oct 25, 2005
Data writing method for semiconductor memory device and semiconductor memory device
TOSHIBA KK78 citations98
US6720612B2Apr 13, 2004
Semiconductor device
TOSHIBA KK75 citations98
US6160297ADec 12, 2000
Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines
TOSHIBA KK119 citations98
US6057580AMay 2, 2000
Semiconductor memory device having shallow trench isolation structure
TOSHIBA KK91 citations98
US6894341B2May 17, 2005
Semiconductor device and manufacturing method
TOSHIBA KK61 citations96
US6853029B2Feb 8, 2005
Non-volatile semiconductor memory device with multi-layer gate structure
TOSHIBA KK58 citations96
US6835978B2Dec 28, 2004
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK43 citations96
US6818508B2Nov 16, 2004
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK66 citations96
US6512253B2Jan 28, 2003
Nonvolatile semiconductor memory
TOSHIBA KK45 citations96
US7939406B2May 10, 2011
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7595522B2Sep 29, 2009
Nonvolatile semiconductor memory
TOSHIBA KK17 citations93
US7573092B2Aug 11, 2009
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7122432B2Oct 17, 2006
Non-volatile semiconductor memory device and manufacturing method thereof
TOSHIBA KK29 citations93
US7081386B2Jul 25, 2006
Semiconductor device and method of manufactuing the same
TOSHIBA KK17 citations93
US7049653B2May 23, 2006
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK18 citations93
US7045423B2May 16, 2006
Non-volatile semiconductor memory device with multi-layer gate structure
TOSHIBA KK24 citations93
US6974979B2Dec 13, 2005
Nonvolatile semiconductor memory
TOSHIBA KK17 citations93
US6844590B2Jan 18, 2005
Semiconductor device with trench isolation between two regions having different gate insulating films
TOSHIBA KK20 citations93
US6809967B2Oct 26, 2004
Data writing method for semiconductor memory device and semiconductor memory device
TOSHIBA KK18 citations93
US6784041B2Aug 31, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK23 citations93
US6611010B2Aug 26, 2003
Semiconductor device
TOSHIBA KK22 citations93
US6495896B1Dec 17, 2002
Semiconductor integrated circuit device with high and low voltage wells
TOSHIBA KK29 citations93
US6157056ADec 5, 2000
Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays
TOSHIBA KK38 citations93
US7141474B2Nov 28, 2006
Fabrication method of a nonvolatile semiconductor memory
TOSHIBA KK18 citations92
US6798038B2Sep 28, 2004
Manufacturing method of semiconductor device with filling insulating film into trench
TOSHIBA KK43 citations92
US6534867B1Mar 18, 2003
Semiconductor device, semiconductor element and method for producing same
TOSHIBA KK34 citations92
US6943453B2Sep 13, 2005
Superconductor device and method of manufacturing the same
TOSHIBA KK12 citations84
US6927998B2Aug 9, 2005
Nonvolatile semiconductor memory device capable of reducing threshold voltage variations of memory cells due to capacitance coupling
TOSHIBA KK14 citations84
US6921960B2Jul 26, 2005
Capacitor element with an opening portion formed in a peripheral circuit
TOSHIBA KK19 citations84
US6531357B2Mar 11, 2003
Method of manufacturing a semiconductor device
TOSHIBA KK15 citations84
US6388341B2May 14, 2002
Semiconductor device
TOSHIBA KK15 citations84
US6927449B2Aug 9, 2005
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations82
US7893477B2Feb 22, 2011
Nonvolatile semiconductor memory
TOSHIBA KK6 citations74
US7838404B2Nov 23, 2010
Method of fabricating a nonvolatile semiconductor memory
TOSHIBA KK4 citations74
US7449745B2Nov 11, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK5 citations74
US7425739B2Sep 16, 2008
Nonvolatile semiconductor memory
TOSHIBA KK6 citations74
US7352027B2Apr 1, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK6 citations74
US7348627B2Mar 25, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK5 citations74
US7332762B2Feb 19, 2008
Nonvolatile semiconductor memory
TOSHIBA KK3 citations74
US6969660B2Nov 29, 2005
Method of manufacturing a semiconductor device with trench isolation between two regions having different gate insulating films
TOSHIBA KK8 citations74
US6806525B2Oct 19, 2004
Semiconductor device and operation method thereof
TOSHIBA KK12 citations74
US6596578B2Jul 22, 2003
Semiconductor device and manufacturing method thereof
TOSHIBA KK9 citations74
TAKEUCHI YUJI
1 patentShowing the top 50 of 95 patents by PatentIndex Score.