Inventor
NIDO MASAAKI
JP17 patents
⚠️ This page may combine multiple inventors who share the name “NIDO MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
16 patentsUS5793054AAug 11, 1998
Gallium nitride type compound semiconductor light emitting element
NEC CORP98 citations97
US6977952B2Dec 20, 2005
Nitride based semiconductor light-emitting device
NEC CORP20 citations92
US6855959B2Feb 15, 2005
Nitride based semiconductor photo-luminescent device
NEC CORP32 citations92
US6420198B1Jul 16, 2002
Gallium nitride based compound semiconductor laser and method of forming the same
NEC CORP24 citations92
US6201823B1Mar 13, 2001
Gallium nitride based compound semiconductor laser and method of forming the same
NEC CORP23 citations92
US5843227ADec 1, 1998
Crystal growth method for gallium nitride films
NEC CORP32 citations92
US6329716B1Dec 11, 2001
Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same
NEC CORP25 citations91
US5902393AMay 11, 1999
Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
NEC CORP47 citations91
US7282745B2Oct 16, 2007
Nitride based semiconductor light-emitting device
NEC CORP10 citations84
US6096130AAug 1, 2000
Method of crystal growth of a GaN layer over a GaAs substrate
NEC CORP17 citations83
US6635905B2Oct 21, 2003
Gallium nitride based compound semiconductor light-emitting device
NEC CORP8 citations74
US5559820ASep 24, 1996
Multiple quantum well semiconductor laser
NEC CORP8 citations73
US5425042AJun 13, 1995
Refractive index control optical semiconductor device
NEC CORP17 citations73
US6423562B1Jul 23, 2002
Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same
NEC CORP8 citations72
US7684133B2Mar 23, 2010
Optical module
NEC CORP2 citations62
US5825053AOct 20, 1998
Heterostructure III-V nitride semiconductor device including InP substrate
NEC CORP3 citations62