Inventor
CHANG HSUEH-RONG
US30 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HSUEH-RONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GEN ELECTRIC
18 patentsUS5111253AMay 5, 1992
Multicellular FET having a Schottky diode merged therewith
GEN ELECTRIC279 citations99
US4992390AFeb 12, 1991
Trench gate structure with thick bottom oxide
GEN ELECTRIC219 citations99
US4823176AApr 18, 1989
Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
GEN ELECTRIC165 citations99
US4801986AJan 31, 1989
Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
GEN ELECTRIC329 citations99
US4982260AJan 1, 1991
Power rectifier with trenches
GEN ELECTRIC245 citations98
US4903189AFeb 20, 1990
Low noise, high frequency synchronous rectifier
GEN ELECTRIC167 citations98
US4994871AFeb 19, 1991
Insulated gate bipolar transistor with improved latch-up current level and safe operating area
GEN ELECTRIC63 citations96
US4961100AOct 2, 1990
Bidirectional field effect semiconductor device and circuit
GEN ELECTRIC100 citations96
US5412289AMay 2, 1995
Using a magnetic field to locate an amalgam in an electrodeless fluorescent lamp
GEN ELECTRIC30 citations93
US4994883AFeb 19, 1991
Field controlled diode (FCD) having MOS trench gates
GEN ELECTRIC48 citations93
US4942445AJul 17, 1990
Lateral depletion mode tyristor
GEN ELECTRIC39 citations93
US5270615ADec 14, 1993
Multi-layer oxide coating for high intensity metal halide discharge lamps
GEN ELECTRIC27 citations92
US5240570AAug 31, 1993
Surfactant augmented in-situ removal of PCBs from soil by electroosmosis
GEN ELECTRIC32 citations90
US5434482AJul 18, 1995
Electrodeless fluorescent lamp with optimized amalgam positioning
GEN ELECTRIC47 citations89
US5343118AAug 30, 1994
Iodine getter for a high intensity metal halide discharge lamp
GEN ELECTRIC7 citations74
US4963950AOct 16, 1990
Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
GEN ELECTRIC14 citations74
US5866983AFeb 2, 1999
Protective metal silicate coating for electrodeless HID lamps
GEN ELECTRIC3 citations63
US5438244AAug 1, 1995
Use of silver and nickel silicide to control iodine level in electrodeless high intensity discharge lamps
GEN ELECTRIC4 citations63
ROCKWELL SCIENCE CENTER LLC
4 patentsUS6380569B1Apr 30, 2002
High power unipolar FET switch
ROCKWELL SCIENCE CENTER LLC74 citations96
US6252288B1Jun 26, 2001
High power trench-based rectifier with improved reverse breakdown characteristic
ROCKWELL SCIENCE CENTER LLC77 citations96
US6392273B1May 21, 2002
Trench insulated-gate bipolar transistor with improved safe-operating-area
ROCKWELL SCIENCE CENTER LLC56 citations92
US6252258B1Jun 26, 2001
High power rectifier
ROCKWELL SCIENCE CENTER LLC37 citations92