Inventor

CHEN TUNG-PO

TW29 patents

⚠️ This page may combine multiple inventors who share the name “CHEN TUNG-PO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN TUNG-PO

UNITED MICROELECTRONICS CORP

Method of fabricating field effect transistor

Method of fabricating CMOS using Si-B layer to form source/drain extension junction

Manufacturing method capable of preventing corrosion of metal oxide semiconductor

Method for fabricating an embedded dynamic random access memory using self-aligned silicide technology

Salicide formation process

Method for forming MOSFET

Method of forming salicide in embedded dynamic random access memory

Method of forming a MOS transistor

Method of removing oxynitride by forming an offset spacer

Process for forming high temperature stable self-aligned metal silicide layer

Method for reducing or avoiding the formation of a silicon recess in SDE junction regions

Method of fabricating dual gate

Structure of a spacer

Method of reducing loss of metal silicide in pre-metal etching

Method of manufacturing self-aligned silicide

Manufacturing method capable of preventing corrosion and contamination of MOS gate

Self-aligned silicide manufacturing method

Planarization on an embedded dynamic random access memory

Process for forming high temperature stable self-aligned metal silicide layer

Method for fabricating an embedded DRAM with self-aligned borderless contacts

Method for reducing thermal budget in node contact application

Method for forming polycide dual gate

Method for fabricating self-aligned silicide

Method of forming borderless contact

Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects

Salicide formation process

POWERCHIP SEMICONDUCTOR CORP

Method for manufacturing gate dielectric layer

Method for manufacturing one-time electrically programmable read only memory

NAT SCIENCE COUNCIL

Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device