Inventor
YOSHII SHIGEO
JP28 patents
⚠️ This page may combine multiple inventors who share the name “YOSHII SHIGEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
21 patentsUS6740928B2May 25, 2004
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD154 citations99
US6548825B1Apr 15, 2003
Semiconductor device including barrier layer having dispersed particles
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD43 citations96
US6169296B1Jan 2, 2001
Light-emitting diode device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD57 citations96
US7009216B2Mar 7, 2006
Semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6903383B2Jun 7, 2005
Semiconductor device having a high breakdown voltage for use in communication systems
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US6707074B2Mar 16, 2004
Semiconductor light-emitting device and apparatus for driving the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US5956362ASep 21, 1999
Semiconductor light emitting device and method of etching
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US5822347AOct 13, 1998
Semiconductor light emitting device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US5339326AAug 16, 1994
Reflector for semiconductor laser end-face and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US7220482B2May 22, 2007
Aligned fine particles, method for producing the same and device using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD38 citations91
US7419849B2Sep 2, 2008
Method for producing single electron semiconductor element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US7041530B2May 9, 2006
Method of production of nano particle dispersed composite material
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations82
US7419529B2Sep 2, 2008
Method of forming fine particle array on substrate and semiconductor element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6778308B2Aug 17, 2004
Process of fabricating semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6087725AJul 11, 2000
Low barrier ohmic contact for semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6953954B2Oct 11, 2005
Plasma oscillation switching device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US6861679B2Mar 1, 2005
Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US6917457B2Jul 12, 2005
Process of fabricating semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7414261B2Aug 19, 2008
Ballistic semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US7323725B2Jan 29, 2008
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations62
US5488234AJan 30, 1996
Semiconductor element having bivalent and VI group element and an insulating layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations58
PANASONIC IP MAN CO LTD
3 patentsUS10741600B2Aug 11, 2020
Imaging device including semiconductor substrate and pixel
PANASONIC IP MAN CO LTD0 citations52
US10164123B2Dec 25, 2018
Imaging device including semiconductor substrate and unit pixel cell
PANASONIC IP MAN CO LTD1 citations52
US10157952B2Dec 18, 2018
Imaging device including semiconductor substrate and unit pixel cell
PANASONIC IP MAN CO LTD1 citations52