Inventor
TSAI CHENG-TZUNG
TW16 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CHENG-TZUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
10 patentsUS8592271B2Nov 26, 2013
Metal-gate CMOS device and fabrication method thereof
UNITED MICROELECTRONICS CORP7 citations84
US10068963B2Sep 4, 2018
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP7 citations83
US7935590B2May 3, 2011
Method of manufacturing metal oxide semiconductor and complementary metal oxide semiconductor
UNITED MICROELECTRONICS CORP5 citations62
US6248178B1Jun 19, 2001
Method for removing pad nodules
UNITED MICROELECTRONICS CORP2 citations56
US10439023B2Oct 8, 2019
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations51
US10177231B2Jan 8, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9837493B2Dec 5, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US7714396B2May 11, 2010
Metal-oxide semiconductor field effect transistor
UNITED MICROELECTRONICS CORP1 citations51
US10573649B2Feb 25, 2020
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations41
US9590041B1Mar 7, 2017
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations41
TSAI CHEN-HUA
3 patentsUS8207523B2Jun 26, 2012
Metal oxide semiconductor field effect transistor with strained source/drain extension layer
TSAI CHEN-HUA28 citations92
US8058133B2Nov 15, 2011
Method of fabrication of metal oxide semiconductor field effect transistor
TSAI CHEN-HUA12 citations83
US8273642B2Sep 25, 2012
Method of fabricating an NMOS transistor
TSAI CHEN-HUA0 citations48