Inventor
HWANG SANGWON
KR17 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SANGWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS7929350B2Apr 19, 2011
Nonvolatile memory device, operating method thereof, and memory system including the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US8054682B2Nov 8, 2011
Non-volatile memory device and page buffer circuit thereof
SAMSUNG ELECTRONICS CO LTD10 citations83
US8018774B2Sep 13, 2011
Method of operating nonvolatile memory device and memory system
SAMSUNG ELECTRONICS CO LTD8 citations80
US7881133B2Feb 1, 2011
Method of managing a flash memory and the flash memory
SAMSUNG ELECTRONICS CO LTD6 citations73
US11322208B2May 3, 2022
Non-volatile memory device, storage device and program method thereof
SAMSUNG ELECTRONICS CO LTD3 citations67
US11682460B2Jun 20, 2023
Non-volatile memory device, storage device and program method thereof
SAMSUNG ELECTRONICS CO LTD0 citations56
US11835579B2Dec 5, 2023
Memory device detecting defect by measuring line resistance of word line
SAMSUNG ELECTRONICS CO LTD0 citations53
US12346629B2Jul 1, 2025
Server and control method therefor
SAMSUNG ELECTRONICS CO LTD0 citations51
US11798645B2Oct 24, 2023
Storage device for performing reliability check by using error correction code (ECC) data
SAMSUNG ELECTRONICS CO LTD0 citations45
US8054708B2Nov 8, 2011
Power-on detector, operating method of power-on detector and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
HWANG SANGWON
3 patentsUS8149625B2Apr 3, 2012
Nonvolatile memory device, operating method thereof, and memory system including the same
HWANG SANGWON19 citations90
US8116160B2Feb 14, 2012
Methods of detecting a shift in the threshold voltage for a nonvolatile memory cell
HWANG SANGWON14 citations82
US8531879B2Sep 10, 2013
Semiconductor memory device and an operating method thereof
HWANG SANGWON3 citations58